Passing Gate Buried Gate Structure for GIDL Suppression
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Solution Overview
Problem
Gate-induced drain leakage (GIDL) in semiconductor devices increases operational unreliability due to overlapping gate electrodes and junction regions, particularly exacerbated by passing gates in buried gate structures.
Innovation Solution
Implanting impurity ions or dopants into the gate electrode to tailor the doping profile and smooth the doping gradient of junction regions, reducing the effective electric field and minimizing GIDL.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a buried gate structure is used with gate electrode overlapping junction regions, then device integration is achieved, but gate-induced drain leakage (GIDL) increases
Solution Approach 1:
The patent applies local quality by creating a doped region specifically at the tail end of the gate electrode where it overlaps with the junction region. This localized doping modifies the electrical properties only in the critical area where GIDL occurs, without affecting other parts of the device. The doped region is positioned precisely at the gate electrode tail adjacent to the junction region, providing targeted suppression of harmful effects while maintaining overall device integration.
Solution Approach 2:
The patent changes the electrical parameters by introducing a doped region with specific doping concentration and polarity matching the adjacent junction region. This parameter change modifies the electric field distribution and potential profile in the overlap region, thereby reducing GIDL. The doping concentration and type are carefully selected to create a favorable potential gradient that suppresses leakage current while maintaining device functionality.
2Reliability
If a passing gate is added to the buried gate structure, then word-line interference is reduced, but GIDL is exacerbated
Solution Approach 1:
The patent applies local quality by positioning the doped region specifically at the tail of the gate electrode in the isolation region where it interfaces with the junction region. This localized modification addresses the GIDL problem in the passing gate structure without affecting the word-line interference reduction benefit. The doped region is created only in the critical overlap area, leaving other parts of the passing gate structure intact.
Solution Approach 2:
The patent converts the harmful effect of the passing gate structure (which exacerbates GIDL) into a benefit by strategically placing a doped region that suppresses GIDL. The doped region transforms the problematic overlap region into a controlled structure where the doping creates a favorable electric field that reduces leakage, thereby converting the passing gate's harmful effect into a beneficial suppression mechanism.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the operational reliability of semiconductor devices by reducing interference between word-lines and extending data retention time.
Implementation Method 1
Implanting impurity ions or dopants into a gate electrode tailors the doping profile of the junction regions and smooths the doping gradient of the junction regions
Implementation Method 2
the additional doped region in the gate electrode reduces the effective electric field
Data Source
AI summary
A semiconductor device with a passing gate is provided. The semiconductor device includes a substrate having a first trench and a first gate structure in the first trench. The first gate structure includes a first gate electrode having a first doped region.