Pattern Decomposition for Double Exposure Layouts
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Solution Overview
Problem
Conventional double-exposure methods fail to achieve complicated layout patterns in semiconductor manufacturing, requiring additional masks and processes like triple-exposure methods, which increase costs and turnaround times.
Innovation Solution
A pattern decomposition method that decomposes target patterns into groups for first and second exposure, merging them to achieve complicated layouts using double exposure, considering the wavelength and numerical aperture of the exposure system to reduce the number of masks and processes needed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If triple-exposure method is used to achieve complicated layout patterns, then pattern complexity is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent segments the target pattern into multiple sub-patterns that can be independently exposed in sequential steps. By dividing the complicated layout into manageable portions and exposing them in separate exposure cycles, the method achieves complex patterns using only double exposure rather than requiring triple exposure with additional masks
Solution Approach 2:
The patent performs preliminary decomposition of the target pattern before the actual exposure process. By pre-dividing the complicated layout into suitable sub-patterns and determining the optimal exposure sequence in advance, the method enables complex pattern formation through double exposure without needing additional masks or processes
2Adaptability or versatility
If triple-exposure method is used to achieve complicated layout patterns, then pattern complexity is improved, but manufacturing time increases
Solution Approach 1:
The patent segments the exposure process into two sequential exposure steps with intermediate processing. By dividing the pattern formation into two manageable exposure cycles rather than three, the method reduces the total number of process cycles and thereby decreases manufacturing turnaround time while still achieving complicated layout patterns
Solution Approach 2:
The patent performs preliminary decomposition and planning of the exposure sequence before execution. By pre-determining how to divide the target pattern into sub-patterns and establishing the optimal two-step exposure sequence in advance, the method minimizes the number of iterative cycles needed, thereby reducing overall manufacturing time
3Ease of manufacture
If double-exposure method is used for simple patterns, then process simplicity is maintained, but pattern complexity is insufficient
Solution Approach 1:
The patent applies segmentation by dividing the target pattern into sub-patterns that can be exposed in sequential steps. This allows the method to maintain the simplicity of double exposure while extending its capability to handle complicated layout patterns that were previously only achievable through triple exposure
Solution Approach 2:
The patent introduces dynamic adaptability in the pattern decomposition strategy. By adjusting how the target pattern is divided into sub-patterns based on the specific layout requirements, the method can handle both simple and complicated patterns using the same double-exposure framework, thereby extending its versatility without sacrificing process simplicity
Data Source
AI summary
A pattern decomposition method capable of achieving patterns with a complicated layout by double exposure. The pattern decomposition method for decomposing a target pattern which includes first patterns having repeated lines and spaces and second patterns disposed between the first patterns and having a predetermined size into patterns for first exposure and patterns for second exposure, comprises decomposing the first patterns into a pattern for first exposure and a pattern for second exposure, decomposing the second patterns into a pattern for first exposure and a pattern for second exposure, and respectively merging the pattern for first exposure or the pattern for second exposure of the first patterns with the pattern for first exposure or the pattern for second exposure of the second patterns.