Pattern Formation Method Using Slimmed Resist and Pinning Portions
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Solution Overview
Problem
The directed self-assembly (DSA) lithography technique for semiconductor devices is time-consuming due to its complex process, requiring a reduction in the number of manufacturing steps for efficient pattern formation.
Innovation Solution
A pattern formation method involving the formation of a resist pattern, slimming it, creating a pinning portion with affinity for a specific polymer, depositing an etching product, forming a neutral film, and applying a block copolymer film to achieve microphase separation, allowing for the selective removal of polymer portions to form a fine pattern in fewer steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the directed self-assembly (DSA) technique is used for lithography, then fine patterns can be formed, but the process takes longer
Solution Approach 1:
The method performs preliminary actions by forming a resist pattern and slimming it before introducing the block copolymer. The pinning portion is pre-formed on the slimmed resist pattern, creating a prepared substrate that guides subsequent self-assembly. This preliminary structuring reduces the time needed for the actual pattern formation step.
Solution Approach 2:
The process segments the pattern formation into distinct functional stages: resist pattern formation, slimming to create pinning portions, neutral film deposition, and block copolymer self-assembly. This segmentation allows each step to be optimized independently, with the slimmed resist pattern serving as a pre-prepared guide structure that accelerates the final pattern formation.
2Manufacturing precision
If the DSA technique is used, then fine patterns can be formed, but the number of manufacturing steps increases
Solution Approach 1:
The method merges multiple functions into the slimmed resist pattern structure. The slimmed resist pattern simultaneously serves as the pattern definition template and creates the pinning portions that guide block copolymer self-assembly. The neutral film layer combines substrate preparation and polymer guidance functions, reducing the total number of separate manufacturing steps required.
Solution Approach 2:
The slimmed resist pattern structure performs multiple functions: it defines the overall pattern geometry, creates pinning portions for polymer alignment, and provides a surface for neutral film deposition. This multi-functionality reduces the number of dedicated steps needed for each function, simplifying the overall manufacturing process while maintaining fine pattern capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of fine patterns with reduced processing steps, enhancing the efficiency of the pattern formation process while maintaining precision, thereby addressing the time constraints of DSA techniques.
Implementation Method 1
forming a microphase separation pattern by applying a predetermined process to the block copolymer film to perform microphase separation
Implementation Method 2
forming a pinning portion having affinity for a first polymer by depositing, on a surface of the slimmed resist pattern, an etching product produced by etching the underlying film
Data Source
AI summary
According to one embodiment, a pattern formation method includes forming a resist pattern on an underlying film, slimming the resist pattern, forming a pinning portion having affinity for a first polymer by depositing, on a surface of the slimmed resist pattern, an etching product produced by etching the underlying film, forming a neutral, film having affinity for the first polymer and a second polymer on the underlying film after the etching, forming a block copolymer film containing the first polymer and the second polymer on the pinning portion and the neutral film, forming a microphase separation pattern by applying a predetermined process to the block copolymer film to perform microphase separation.