Pattern Forming Method Using Block Copolymer Self-Assembly
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Solution Overview
Problem
Current lithography technologies for semiconductor manufacturing, such as double patterning and EUV lithography, face increased costs and decreased throughput due to the refinement of pattern sizes, necessitating a more efficient method for forming precise patterns.
Innovation Solution
A pattern forming method utilizing Directed Self-Assembly (DSA) with block copolymers, where a hard mask with uneven patterns is created, followed by coating and annealing to form self-assembled patterns, allowing for the transfer of desired patterns onto a substrate while reducing manufacturing costs by minimizing high-resolution lithography requirements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography technologies (double patterning, EUV) are used to form refined patterns, then manufacturing precision is improved, but manufacturing cost increases and productivity decreases
Solution Approach 1:
The patent divides the patterning process into two distinct stages: first forming a guide pattern with conventional lithography, then using block copolymer self-assembly to generate the final refined pattern. This segmentation allows each stage to optimize for its specific function, avoiding the need for multiple high-resolution lithography steps
Solution Approach 2:
The block copolymer material performs self-assembly through microphase separation, automatically forming the desired periodic pattern structure without requiring external lithography intervention. This self-service mechanism eliminates the need for expensive high-resolution lithography equipment and multiple patterning cycles
2Manufacturing precision
If conventional lithography technologies are used to form refined patterns, then manufacturing precision is improved, but manufacturing cost increases
Solution Approach 1:
The block copolymer's inherent self-assembly capability through microphase separation replaces expensive lithography equipment and multiple processing steps with a simple coating and annealing process, dramatically reducing manufacturing costs while achieving sub-10nm pattern precision
Solution Approach 2:
The patent changes the fundamental parameter from requiring high-resolution lithography to using self-assembly, transitioning the patterning mechanism from external light-based fabrication to internal material-driven organization, thereby eliminating equipment costs
3Productivity
If block copolymer self-assembly is used, then productivity and manufacturing cost are improved, but the ability to form patterns in specific desired regions is reduced
Solution Approach 1:
The guide pattern is designed with spatially varying properties: in the first region, it has periodic structures that direct block copolymer self-assembly, while in the second region, it has non-periodic structures that prevent self-assembly. This local quality differentiation enables selective pattern formation in specific regions
Solution Approach 2:
The substrate is divided into distinct functional regions with different guide pattern characteristics, allowing independent control over where self-assembly occurs. This spatial segmentation provides precise pattern placement control while maintaining the benefits of self-assembly in targeted areas
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively forms precise patterns with reduced manufacturing costs by leveraging self-assembly materials to transfer pattern shapes accurately, addressing the limitations of existing lithography techniques.
Implementation Method 1
forming a self-assembled pattern including a first polymer portion and a second polymer portion by phase separating the self-assembling material
Implementation Method 2
The self-assembly is achieved by energy stabilization to form a pattern having high dimensional accuracy
Data Source
AI summary
According to one embodiment, a pattern forming method includes, forming a first mask on a film to be processed, forming a guide that has a pattern including first openings and second openings, forming a second mask which covers the first openings and does not cover the second openings, etching the first mask using the second mask and the guide as a mask, removing the second mask, applying a self-assembling material into the first openings and the second openings, heating the self-assembling material to form a self-assembled pattern including a first polymer portion and a second polymer portion, etching the first polymer portion, etching the first mask using the second polymer portion and the guide as a mask, and processing the film to be processed using the first mask as a mask.