Pattern Measurement for Micro Loading Deformation
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Solution Overview
Problem
Current methods for semiconductor pattern measurement do not effectively evaluate deformation caused by the micro loading effect during dry-etching, which is crucial for selecting appropriate pattern designs and process control in three-dimensional structurization.
Innovation Solution
A pattern measurement method and apparatus that measure dimensions based on charged particle beam irradiation, classifying distances and inner diameters of patterns in various directions to quantify deformation due to micro loading effects, allowing for the calculation of an index value representing pattern distortion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional pattern measurement methods are used, then general dimension measurement is achieved, but micro loading effect evaluation capability is lost
Solution Approach 1:
The measurement method segments the pattern evaluation into multiple directional measurements. By measuring distances from a reference pattern to adjacent patterns in multiple directions (e.g., 0°, 45°, 90°, 135°), the method isolates and evaluates deformation in specific directions, enabling precise assessment of micro loading effects while maintaining overall measurement capability
Solution Approach 2:
The invention introduces angular/directional dimension to the measurement process. Instead of single-point or single-direction measurement, it measures pattern dimensions across multiple angular directions and compares these measurements to detect asymmetric deformation caused by micro loading effects, adding a dimensional aspect to the evaluation
2Measurement precision
If multiple measurement directions are implemented, then micro loading effect evaluation is improved, but measurement complexity increases
Solution Approach 1:
The method applies local quality by focusing measurements on specific critical areas and directions. Instead of uniformly measuring all patterns equally, it selectively measures distances in directions where micro loading effects are most likely to manifest, and compares these localized measurements to detect deformation patterns
Solution Approach 2:
The invention performs preliminary classification of measurement directions and patterns. By pre-defining measurement angles and selecting reference patterns before actual measurement, it streamlines the complex multi-directional measurement process into a structured sequence, reducing operational complexity while maintaining measurement comprehensiveness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate evaluation and quantification of pattern deformation caused by micro loading effects, aiding in process control and design optimization for semiconductor manufacturing.
Implementation Method 1
measuring a dimension of a pattern formed on a sample based on a detection signal acquired based on irradiation of a charged particle beam
Data Source
AI summary
A pattern measurement method and measurement apparatus are provided that appropriately evaluate the deformation of a pattern occurring due to a micro loading effect. In order to achieve the above-mentioned object, there are provided pattern measurement method and apparatus that measure a dimension of a pattern formed on a sample. In the pattern measurement method and apparatus, distances between a reference pattern and a plurality of adjacent patterns adjacent to the reference pattern or inner diameters of the reference pattern in a plurality of directions are measured, and the measurement results of the plurality of distances between the reference pattern and the adjacent patterns or the measurement results of the inner diameters of the reference pattern in the plurality of directions are classified according to distances between the reference pattern and the adjacent patterns or directions of the patterns adjacent to the reference pattern.