Patterned Electron Blocking Region in Light Emitting Device
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Solution Overview
Problem
Conventional light emitting devices with electron blocking layers (EBLs) improve internal quantum efficiency by blocking electron overflow but also hinder hole injection, leading to suboptimal performance.
Innovation Solution
A light emitting device with a second-conductive-type semiconductor layer featuring patterned electron blocking regions and hole injection regions, where the electron blocking regions have a greater energy bandgap and the hole injection regions have a smaller energy bandgap, allowing for efficient electron blocking and improved hole injection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a continuous electron blocking layer is used, then electron overflow is effectively blocked and internal quantum efficiency is improved, but hole injection is hindered and device performance deteriorates
Solution Approach 1:
The continuous electron blocking layer is segmented into discrete patterned regions with high bandgap materials. This segmentation creates localized electron blocking zones that prevent electron overflow while leaving gaps that allow hole injection, thereby resolving the contradiction between electron blocking effectiveness and hole injection efficiency
Solution Approach 2:
Different regions of the semiconductor layer are assigned different material compositions and bandgap characteristics. The patterned electron blocking regions use high bandgap materials for electron confinement, while the intervening regions use lower bandgap materials optimized for hole injection, achieving local optimization of both electron blocking and hole injection functions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances internal quantum efficiency by preventing electron overflow while facilitating hole injection, thereby improving the overall performance of the light emitting device.
Implementation Method 1
the electron blocking regions have a greater energy bandgap and the hole injection regions have a smaller energy bandgap
Implementation Method 2
A light emitting device with a second-conductive-type semiconductor layer featuring patterned electron blocking regions and hole injection regions
Data Source
AI summary
A light emitting device is disclosed. The light emitting device includes a first-conductive-type semiconductor layer, a second-conductive-type semiconductor layer, and an active layer interposed between the first-conductive-type semiconductor layer and the second-conductive-type semiconductor layer. The second-conductive-type semiconductor layer includes an electron blocking region closely disposed to the active layer and having a pattern with a plurality of elements spaced apart from each other.