Patterned Nucleation Film for Two-Phase Chip Hot Spot Cooling
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Solution Overview
Problem
High density semiconductor chips experience thermal stress and increased failure rates due to the build-up of superheat and local hot spots caused by dielectric fluids with low surface tension penetrating into chip cavities, leading to non-uniform thermal management.
Innovation Solution
The use of flexible or rigid heat transfer nucleation films with dielectric and thin metal layers featuring microstructures, cavities, and nodules to enhance two-phase immersion cooling by creating more nucleation sites and improving thermal dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If dielectric fluid with low surface tension is used for immersion cooling, then thermal transport efficiency is improved, but local hot spots and thermal stress increase
Solution Approach 1:
The patent applies local quality by creating patterned hydrophilic regions (metal features) on the chip surface surrounded by hydrophobic regions (dielectric material). This local differentiation causes bubbles to form and detach at specific locations rather than uniformly across the surface, preventing superheat buildup in cavity regions while maintaining efficient thermal transport at the metal features where heat generation is highest.
Solution Approach 2:
The dielectric material serves as an intermediary that modifies the interaction between the cooling fluid and the chip surface. By creating hydrophobic regions, the dielectric material mediates bubble behavior to prevent fluid penetration into cavities, thereby eliminating the harmful effect of superheat buildup while preserving the beneficial thermal transport properties of the low surface tension fluid.
2Temperature
If uniform metal patterns are formed on dielectric layer, then nucleation sites are increased, but manufacturing complexity increases
Solution Approach 1:
The patent utilizes the dielectric layer as a porous or patterned substrate that can be formed using standard semiconductor fabrication techniques. The metal features are deposited on this patterned dielectric layer, creating a hierarchical structure that increases nucleation sites while leveraging existing manufacturing capabilities to minimize process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The films provide uniform heat dissipation and reduce thermal stress by promoting rapid bubble formation and transport, enhancing chip performance and reducing failure rates.
Implementation Method 1
The immersion cooling technique involves a phase change in a thermal transport process whereby it reduces interfacial resistance when it is in contact with heated semi-conductor devices
Implementation Method 2
The phase change in a thermal transport process whereby it reduces interfacial resistance when it is in contact with heated semi-conductor devices
Implementation Method 3
A first film with features for two-phase cooling includes a dielectric layer having a first surface for attachment to a cold plate or circuits and having a second surface. A metal layer is on the second surface of the dielectric layer and has a pattern of features on a side opposite the dielectric layer
Implementation Method 4
due to its low surface tension and wetting nature, the fluid penetrates deep into cavities
Data Source
AI summary
A direct to chip cooling film for two-phase cooling. The film includes a dielectric layer having a first surface for attachment to a cold plate or circuits and having a second surface. A metal layer is on the second surface of the dielectric layer with a pattern of features on a side opposite the dielectric layer. This surface pattern provides increased surface area and multiple nucleation sites for bubbles formation for two-phase cooling. The features can also include metal nodules to further enhance the nucleation.