Patterning Process Control Using Etch Tilt Feedback
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Solution Overview
Problem
The advancement of lithography and patterning processes has led to increased demands for accuracy in overlay and critical dimension, with errors such as optical aberration, patterning device heating, and substrate heating introducing deviations in etching paths, resulting in imperfections in semiconductor devices.
Innovation Solution
A method of controlling a patterning process by obtaining tilt data from measurements of etching paths and using this data to adjust subsequent layer formations, thereby reducing errors in overlay and critical dimension.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If lithography and patterning processes are advanced to reduce dimensions and increase functional elements, then productivity and device complexity are improved, but manufacturing precision and reliability deteriorate due to increased errors in overlay and critical dimension
Solution Approach 1:
The patent implements a feedback mechanism where tilt data obtained from measuring etching path deviations is used to control and adjust subsequent patterning processes. This closed-loop control system continuously monitors manufacturing precision and makes real-time corrections to compensate for errors, thereby maintaining high precision despite increased device complexity and productivity demands
2Adaptability or versatility
If patterning processes are performed to form multiple layers and features, then device functionality is improved, but manufacturing precision deteriorates due to errors introduced in etching steps and other process variations
Solution Approach 1:
The system uses feedback control by measuring tilt in etching paths and using this information to adjust subsequent patterning steps. This allows the process to maintain precision across multiple layers and complex device structures by continuously correcting for errors introduced at each processing stage
Solution Approach 2:
The patent performs preliminary measurement of tilt in etching paths before subsequent patterning steps. By obtaining tilt data in advance and using it to control the next patterning process, the system proactively compensates for potential precision errors before they affect the final device structure
Data Source
AI summary
Methods of controlling a patterning process are disclosed. In one arrangement, tilt data resulting from a measurement of tilt in an etching path through a target layer of a structure on a substrate is obtained. The tilt represents a deviation in a direction of the etching path from a perpendicular to the plane of the target layer. The tilt data is used to control a patterning process used to form a pattern in a further layer.