Pb-Doped Semiconductor Structure for Oxidation-Free Carrier Mobility
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Solution Overview
Problem
As semiconductor devices are scaled down, existing methods for enhancing carrier mobility, such as germanium doping, face limitations due to oxidation during fabrication processes, which impede the achievement of optimal device performance.
Innovation Solution
Doping channel and source/drain regions with lead (Pb) ions to induce compressive strain, using thermal annealing and implantation processes to integrate Pb dopants without oxidation, thereby improving carrier mobility in semiconductor devices like finFETs and GAA FETs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If germanium doping is used to enhance carrier mobility, then carrier mobility is improved, but oxidation occurs during fabrication processes which degrades device performance
Solution Approach 1:
The patent changes the dopant material parameter from germanium to lead (Pb). Lead doping achieves the same goal of enhancing carrier mobility through strain induction, but unlike germanium, lead does not oxidize during fabrication processes. This parameter change resolves the contradiction by maintaining the beneficial effect on carrier mobility while eliminating the harmful oxidation issue.
2Productivity
If device geometry is scaled down to increase functional density, then productivity is improved, but manufacturing precision becomes more difficult to maintain
Solution Approach 1:
The patent changes the material composition parameter by introducing lead-doped regions with specific dopant concentrations (e.g., 1×10^19 to 1×10^21 atoms/cm³). This material parameter change enables better control of strain distribution in scaled-down devices, maintaining manufacturing precision even as geometry dimensions decrease and functional density increases.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of Pb-doped regions enhances carrier mobility and device performance by maintaining strain without oxidation, leading to superior performance in p-type transistors and other semiconductor devices.
Implementation Method 1
Doping channel and source/drain regions with lead (Pb) ions to induce compressive strain, using thermal annealing and implantation processes to integrate Pb dopants
Implementation Method 2
using thermal annealing and implantation processes to integrate Pb dopants without oxidation
Data Source
AI summary
The present disclosure relates to a semiconductor device includes first and second source/drain (S/D) regions doped with lead (Pb) at a first dopant concentration. The semiconductor device also includes a channel region between the first and second S/D regions, where the channel region is doped with Pb at a second dopant concentration that is lower than the first dopant concentration. The semiconductor device further includes first and second S/D contacts in contact with the first and second S/D regions, respectively. The semiconductor device also includes a gate electrode over the channel region.