Phase Change Memory Contact Formation Using Isolation Spacer Etching
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Solution Overview
Problem
The resolution of photolithography in phase change memory device manufacturing is limited by the size and spacing of circuit patterns, hindering further integration and requiring innovative techniques to enhance pattern resolution.
Innovation Solution
A method involving the formation of insulating layer patterns with specific sidewalls to create contact holes, where initial semiconductor patterns are divided using isolation spacers, allowing for finer semiconductor patterns and improved integration by photolithographic and etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography is used to form circuit patterns, then manufacturing process is simple, but pattern resolution is limited and cannot achieve finer features
Solution Approach 1:
The patent applies segmentation by dividing the pattern formation process into multiple stages: first forming initial semiconductor patterns in contact holes, then using isolation spacers to further divide these into finer semiconductor patterns. This multi-stage segmentation enables resolution beyond single photolithography limits
Solution Approach 2:
The patent transitions from two-dimensional planar photolithography patterning to three-dimensional vertical pattern formation using contact holes and sidewall spacers. By utilizing the vertical dimension and sidewall surfaces, the method achieves finer lateral resolution through anisotropic etching and spacer deposition
2Productivity
If feature size and spacing are decreased for higher integration, then device integration increases, but photolithography resolution limits are exceeded
Solution Approach 1:
The patent performs preliminary actions by first forming the insulating layer pattern with contact holes and initial semiconductor patterns before applying isolation spacers. This preliminary structuring enables subsequent division into finer features, achieving high integration density that would be unattainable through direct photolithography
Solution Approach 2:
The isolation spacers serve as intermediaries between the initial semiconductor patterns and the final fine semiconductor patterns. These spacers mediate the transformation by providing sidewall coverage that defines the boundaries of divided semiconductor patterns, enabling resolution beyond photolithography capabilities
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of finer semiconductor patterns and improved integration, overcoming the limitations of traditional photolithography in phase change memory devices, ensuring high-quality contacts and preventing misalignments.
Implementation Method 1
the exposed portions of the initial semiconductor patterns are etched using the isolation spacers to divide each the initial semiconductor patterns into a plurality of semiconductor patterns
Data Source
AI summary
Provided are a method of forming a contact and a method of manufacturing a phase change memory device using the same. The method of forming a contact includes forming on a substrate an insulating layer pattern having first sidewalls extending in a first direction and second sidewalls extending in a second direction perpendicular to the first direction and which together delimit contact holes, forming semiconductor patterns in lower parts of the contact holes, forming isolation spacers on the semiconductor pattern and side surfaces of the first sidewalls to expose portions of the semiconductor patterns, and etching the exposed portions of the semiconductor patterns using the isolation spacers as a mask to divide the semiconductor patterns into a plurality of finer semiconductor patterns.