Phase Change Memory Nitridized Layer Protection
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Solution Overview
Problem
Conventional phase change memory manufacturing processes damage the phase change material layer during subsequent etching, leading to vulnerability and performance deviations in resistance states.
Innovation Solution
A method involving the formation of a nitridized phase change material layer through simultaneous or alternating etching and nitridizing treatment in a plasma etching chamber, using nitrogen-containing gases, to protect the phase change material layer and prevent damage during etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching processes are used to manufacture phase change memory, then the manufacturing process can be completed, but the phase change material layer is damaged leading to performance deviations
Solution Approach 1:
A nitridized phase change material layer is formed on the phase change material layer before the etching process. This preliminary protective layer prevents direct contact between the etching plasma and the phase change material, thereby avoiding damage to the material layer during subsequent etching operations and maintaining both manufacturing precision and reliability
Solution Approach 2:
The nitridized phase change material layer serves as an intermediary protective barrier between the etching plasma and the original phase change material layer. This intermediate layer absorbs the harmful effects of the etching process while allowing the underlying material to remain intact and functional
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The nitridized phase change material layer effectively shields the phase change material from etching-induced damage, maintaining the integrity of resistance states and improving the performance of phase change memory elements.
Implementation Method 1
etching the phase change material according to the upper electrode wire and performing a nitridizing treatment in a same plasma etching chamber
Implementation Method 2
the nitridizing treatment is performed by introducing a nitrogen-containing gas into the plasma etching chamber, and the nitrogen-containing gas includes nitrogen, ammonia or a combination thereof
Data Source
AI summary
A method of manufacturing a phase change memory includes: forming a stacked structure including a conductive layer; a lower electrode layer over the conductive layer; an upper electrode layer over the lower electrode layer; and a phase change material between the lower and upper electrode layers; etching the upper electrode layer according to a first mask to form an upper electrode wire; simultaneously etching the phase change material according to the upper electrode wire and performing a nitridizing treatment in a same plasma etching chamber until a phase change material layer and a nitridized phase change material layer are formed beneath the upper electrode wire and a portion of the lower electrode layer is exposed, wherein the nitridized phase change material layer covers a side surface of the phase change material layer; and removing the portion of the lower electrode layer and the conductive layer therebeneath.