Solid-State Devices TRIZ Cases

Pad pullback technology defines gate trenches in recessed-gate MOS transistors, ensuring uniform depth control to suppress short channel effects.

Alternating organic and inorganic films in the barrier layer prevent moisture and oxygen degradation while simplifying the device structure.

Multi-dielectric layers fill physical isolation trenches between active structures, reducing program disturbance and enhancing reliability.

A photo detector merges visible, infrared, and ultraviolet diodes into one structure.

Stacked conductive layers with titanium and aluminum improve terminal adhesion strength, preventing peeling during repair.

Stacked gate line structures segment resistance change regions for independent voltage control, resolving reliability issues from high integration.

Particulate spacers support a thin wavelength converting layer to resolve the contradiction between high phosphor density and manufacturing precision.

A display device forms a pixel electrode and gate transmission member using a self-assembled monolayer etch stop layer in one mask process.

A solid-state imaging device uses an insulating film with negative charge to form a hole accumulation layer that suppresses noise generation at the element isolation interface.

Segmenting OLED displays into varied pixel units balances luminance output with service life while resolving resolution limits.

Polygonal support pillars arranged in a hexagonal lattice prevent deflection and deformation caused by size variations in cylindrical structures.

A platinum complex with a tetracoordinate ligand featuring phenothiazine or phenoxazine skeletons emits yellow to blue phosphorescence.

Embedding the chip in a composite molding compound with filler particles creates mechanical stability for lateral radiation emission.

Bonding solar cells into rigid plating assemblies increases mechanical stability and throughput while reducing warping during electrode formation.

Segmented pixel islands separate driving elements from active areas, resolving low resolution limits in integral imaging displays.

A composite light harvesting material uses a luminescent intermediary to transfer triplet excitons from organic semiconductors.

A liquid crystal display array substrate uses lateral electrode connections to increase pixel aperture ratio and transmittance.

Backside illuminated near infrared pixels use a buried metal reflector to enhance photon absorption and reduce pixel crosstalk.

Auxiliary gate electrodes reduce contact resistance and enhance effective mobility in organic thin film transistors.

Segmented optical path lengths in the resonator structure balance color purity and luminance for display applications.

Stacked ReRAM structure integrates a dedicated selection transistor with insulated layers and separate contact vias to enable independent cell control.

A single wavelength conversion film with recesses at device gaps eliminates color non-uniformity and stress concentration from individual film attachments.

A semiconductor light emitting device structure integrates an electrostatic discharge protection diode within the substrate to enhance reliability.

Inverting the angular reference between rubbing direction and pixel electrodes prevents viewing angle shifting while maintaining driving order.

Segmented slit conductors lower wiring resistance while minimizing substrate distortion and chip size.

Vertically stacked photoelectric conversion units absorb specific wavelength bands to capture color images without traditional color filters.

A lateral forming method uses a single crystalline seed layer to template amorphous silicon phase transition into continuous single crystalline thin film regions.

A transparent conducting layer deposits directly on a color filter to form pixel electrodes.

A gate layer with broken lines connects to an IGZO film layer through insulating holes, forming a test circuit for early conductorization verification.

A display substrate uses through holes in the sealing region to allow melted sealant flow and gas escape during assembly.

Adjusts image sensor exposure time based on fingerprint contrast ratio to optimize recognition imaging.

A surface-textured encapsulation layer directs light beyond the critical angle to increase optical output from high-power LEDs.

Novel tungsten(VI) complexes enable efficient phosphorescence in organic light-emitting diodes without expensive precious metals.

Seals chip lamination spaces with resin to contain material during dicing, reducing package size and improving surface finish.

Asymmetric pixel positioning disrupts periodic diffraction patterns, ensuring clear images beyond 40 cm distance.

An optical adjuster homogenizes laser intensity to prevent localized overheating and ensure uniform heating of semiconductor chips.

Segmenting the cathode via barriers reduces position-dependent voltage drops across the active area, maintaining uniform luminance in top-emission displays.

Offset gate sidewall contacts stitch cut gate pairs together, reducing wiring congestion and improving chip yield.

An extension electrode prevents fault currents by defining deposition boundaries for accurate layer overlap.

Optimized BaO, TiO2, and Nb2O5 ratios enable high refractive index thin glasses that resist crystallization during flat glass production.

A touch panel design places strip-shaped electrodes between cathode blocks to reduce electromagnetic interference in AMOLED displays.

Replacing ONO structures with LPTEOS-silicon nitride-LPTEOS dielectrics via low-pressure CVD prevents device shifting and metal peeling in 0.5 μm processes.

Distinct electrode shapes reduce reflective interference, increasing light transmittance and sensor sensitivity.

A back illuminated photo detector uses a center portion with lower reflectance to determine the appropriate beam spot radius on the light absorption layer.

Internal substrate voids store desiccants that absorb moisture penetrating flexible OLED barriers, preventing lateral ingress and extending device lifetime.

A semiconductor memory capacitor uses n-type and p-type doped interface layers to create fixed polarization within the dielectric structure.

Segmented glass layers with stress relief materials reduce folding stress and enhance impact resistance in flexible displays.

A cylindrical aligner device with coaxial openings secures lenses and opto-electronic devices through precise mechanical constraints.

A nitridized phase change material layer protects the substrate from plasma etching damage, maintaining resistance state integrity.

Merges biometric sensing with display layers to resolve the contradiction between structural complexity and recognition area.