Semiconductor Terminal Adhesion via Stacked Conductive Layers
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Solution Overview
Problem
The existing semiconductor device terminal structures face issues with adhesion strength, particularly when using anisotropic conductive adhesives, leading to peeling problems during repair and inspection, and existing solutions like planarized films made from organic resin have poor adhesion and are prone to peeling.
Innovation Solution
A semiconductor device structure featuring a stacked configuration of conductive layers including titanium or molybdenum, aluminum, and a transparent conductive layer, with insulation layers to enhance adhesion and protect the metal layers from corrosion, and a fourth conductive layer for improved contact and adhesion with anisotropic conductive films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a planarized film formed using an organic resin is arranged above a glass substrate to increase adhesion of a terminal part, then the adhesion is improved, but the film itself has poor adhesion and is prone to peeling
Solution Approach 1:
The patent employs a composite structure consisting of multiple conductive layers (first conductive layer, second conductive layer, third conductive layer) stacked in sequence, where each layer has different material properties. This composite construction allows the terminal part to achieve high adhesion strength while preventing peeling of individual layers, as the layered structure distributes stress and enhances overall structural integrity.
Solution Approach 2:
The patent transitions from a single-layer planarized film structure to a multi-layer stacked conductive structure with vertical dimensionality. By arranging conductive layers in the vertical direction (stacking configuration), the patent achieves enhanced adhesion strength and peeling resistance that cannot be obtained with a single horizontal film layer.
2Reliability
If a terminal part is connected with a wiring substrate using an anisotropic conductive adhesive, then electrical connection is achieved, but the terminal part peels away when adhesion to ground surface is weak
Solution Approach 1:
The patent uses a composite multi-layer conductive structure where each layer contributes different properties: the first conductive layer provides adhesion to the glass substrate, the second conductive layer provides electrical conductivity, and the third conductive layer enhances adhesion to the anisotropic conductive adhesive. This composite structure simultaneously achieves strong ground surface adhesion and reliable electrical connection.
Solution Approach 2:
The patent divides the terminal part into multiple segmented conductive layers, each performing a specific function. The first conductive layer is responsible for adhesion to the glass substrate, while the second and third layers handle electrical connection and adhesion to the wiring substrate. This segmentation allows optimization of each layer's properties to resolve the contradiction between ground surface adhesion and electrical connection reliability.
3Strength
If a region with low adhesion is sandwiched by regions having high adhesion to increase adhesion of a terminal part formed by stacking a plurality of conductive films, then adhesion is improved, but the structure becomes more complex
Solution Approach 1:
The patent creates a composite terminal part structure with three distinct conductive layers, where the first conductive layer serves as a high adhesion region bonded to the glass substrate, the second conductive layer provides electrical conductivity, and the third conductive layer serves as a high adhesion region bonded to the anisotropic conductive adhesive. This composite structure improves terminal part adhesion while maintaining manufacturing feasibility through a systematic layered approach.
Data Source
AI summary
A semiconductor device in an embodiment according to the present invention includes a first terminal and a second terminal stacked with a first conductive layer including titanium or molybdenum, a second conductive layer including aluminum above the first conductive layer, and a third conductive layer including titanium or molybdenum above the second conductive layer, a first insulation layer between the first terminal and the second terminal, a second insulation layer between the first insulation layer contacting a side wall part of the first terminal, and a fourth conducing layer extending an upper surface of the first terminal and an upper surface of the second insulation layer. The first terminal and the second terminal are arranged on an exterior side of a drive circuit including a semiconductor element.