Vertical Organic Transistor Fault Current Prevention

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Solution Overview

Problem

Vertical organic transistors face issues with fault currents due to inaccuracies in layer deposition during mask technology, leading to defective structures and incorrect operation.

Innovation Solution

A vertical organic transistor design with a layer structure featuring an electrode, counter-electrode, and an electronically active layer arrangement, where a control electrode allows charge carrier transport, and a functional layer patterns active and non-active regions to prevent fault currents by inhibiting charge carrier transport in non-active regions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If mask technology is used to fabricate vertical organic transistor, then layer deposition can be achieved, but defective structures occur due to inaccurate layer deposition and positioning tolerances

Engineering Contradiction:

Improvelayer deposition capabilityVSAvoidlayer overlap accuracy

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent applies preliminary action by forming an extension electrode that protrudes beyond the control electrode before the final layer deposition. This extension electrode serves as a pre-established guide structure that defines the exact deposition area, ensuring accurate layer overlap without relying solely on mask positioning tolerances. The extension electrode is formed in advance to prevent fault currents by creating a physical boundary for subsequent organic layer deposition.

Inventive Principle:

Principle #10Preliminary action

2Ease of manufacture

If mask structures with openings are used for layer deposition, then device layers can be fabricated, but fault currents occur in outer edge regions due to defective layer overlap

Engineering Contradiction:

Improvedevice layer fabricationVSAvoidfault current prevention

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The patent segments the electrode structure into a control electrode and an extension electrode as separate functional parts. The extension electrode specifically addresses the outer edge region problem by protruding beyond the control electrode to provide enhanced coverage and prevent fault currents at the boundaries. This segmentation allows the device to maintain manufacturing simplicity while improving reliability at critical edge regions.

Inventive Principle:

Principle #1Segmentation

3Speed

If vertical organic transistor is designed with short electrode length, then switching speed increases, but manufacturing precision requirements increase

Engineering Contradiction:

Improvecharge carrier traversal speedVSAvoidelectrode dimension control

Core Design Contradiction:

SpeedVSManufacturing precision

Solution Approach 1:

The extension electrode structure serves itself by automatically defining the deposition boundary through its physical geometry. The protruding extension electrode creates a self-aligning feature that guides the organic layer deposition without requiring external mask positioning. This self-service mechanism reduces manufacturing precision requirements while maintaining the short electrode length needed for high switching speed.

Inventive Principle:

Principle #25Self-service

Data Source

PatentUS10103343B2Vertical organic transistor, circuit configuration and arrangement with vertical organic transistors and method of manufacturing

Publication Date: 2018.10.16 NOVALED GMBH

AI summary

The application relates to a vertical organic transistor having a layer structure on a substrate. The layer structure includes an electrode, a counter-electrode, and an electronically active layer arrangement which is disposed between the electrode and the counter-electrode. The application further relates to a method for fabricating a vertical organic transistor and a circuit arrangement.