Phase Change Material in Substrate Cavity for IC Hotspot Thermal Management
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Integrated Circuit (IC) semiconductor device packages face thermal challenges due to increasing heat generation during high-performance operations, leading to potential overheating of hotspots on the IC die, which can exceed safe temperature limits.
Innovation Solution
Incorporating Phase Change Material (PCM) within cavities of the substrate to thermally couple with hotspots, absorbing heat during high-load operations and releasing it during low-load conditions, thereby regulating the temperature of the IC die by oscillating between two phases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If IC die operates at high performance (high frequency and voltage), then computing power and performance increase, but heat generation increases causing hotspot temperature to exceed maximum allowable temperature
Solution Approach 1:
The patent applies phase change material (PCM) that transitions between solid and liquid phases at a specific phase change temperature. During high-performance operation, the PCM absorbs excess heat from hotspots by transitioning from solid to liquid phase, maintaining the hotspot temperature near the phase change temperature. This phase transition mechanism enables the system to operate at high computing power levels without exceeding maximum allowable temperatures.
2Device complexity
If conventional heat dissipation methods are used, then thermal management is simplified, but hotspot temperature cannot be effectively controlled during high-performance operations
Solution Approach 1:
The patent changes the thermal parameters of the system by introducing phase change material with specific phase change temperature and latent heat properties. This parameter change enables the thermal management system to passively regulate hotspot temperature through the phase transition of the PCM, providing effective temperature control during high-performance operations without requiring complex active cooling systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively manages heat dissipation by maintaining hotspot temperatures near the phase change temperature, preventing overheating and ensuring reliable IC die operation across varying load conditions.
Implementation Method 1
the phase change material oscillates between a first phase and a second phase, absorbing heat when transitioning from the first phase to the second phase
Implementation Method 2
absorbing heat when transitioning from the first phase to the second phase, and releasing the absorbed heat when transitioning from the second phase to the first phase
Implementation Method 3
releasing the absorbed heat when transitioning from the second phase to the first phase
Implementation Method 4
thermally couple with hotspots, absorbing heat during high-load operations and releasing it during low-load conditions
Data Source
AI summary
A semiconductor device package structure is provided. The semiconductor device package structure includes a substrate having a cavity, and phase change material within the cavity. In an example, the phase change material has a phase change temperature lower than 120 degree centigrade. A die may be coupled to the substrate. In an example, the semiconductor device package structure includes one or more interconnect structures that are to couple the die to the phase change material within the cavity.