PEALD System Substrate Holder Sealing Mechanism
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Solution Overview
Problem
Plasma enhanced atomic layer deposition systems face contamination issues due to CVD gases escaping into adjacent chambers, leading to particulate contamination and out-gassing, which becomes more significant as feature sizes decrease and film thicknesses become thinner.
Innovation Solution
A plasma enhanced atomic layer deposition system with a processing chamber design that includes a substrate holder with a sealing device to isolate the process space from the transfer space, along with pressure control systems to maintain a contaminant-free environment, and a gas injection system for alternating introduction of process materials to form plasma, reducing the likelihood of contaminants entering the transfer space.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If CVD processes are used for film deposition, then film formation capability is improved, but contamination of adjacent chambers and surfaces occurs
Solution Approach 1:
The processing chamber is divided into two distinct spaces: a process space for film deposition and a transfer space for substrate handling. The sealing device creates a physical barrier that segments the chamber, allowing CVD processes to occur in the process space without contaminating the transfer space. This segmentation enables independent control of each space's environment.
Solution Approach 2:
The harmful CVD gases and contaminants are extracted from the transfer space by maintaining it under vacuum or inert atmosphere conditions. The sealing device allows the transfer space to be isolated and purified, removing the contamination source from the substrate transfer path while preserving film deposition capability in the process space.
2Object-generated harmful factors
If sealing device is added to isolate process space, then contamination is reduced, but device complexity increases
Solution Approach 1:
The substrate holder serves multiple functions: it supports the substrate during transfer, provides the sealing interface to divide the chamber into process and transfer spaces, and acts as a platform for film deposition. This multi-functionality reduces the need for separate dedicated components, thereby limiting the increase in device complexity.
Solution Approach 2:
The sealing device utilizes a flexible sealing structure that conformally contacts the substrate holder edge, creating an effective barrier with minimal structural complexity. The sealing mechanism employs simple geometric features on the substrate holder that engage with the chamber wall, avoiding complex mechanical systems while achieving reliable isolation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system effectively minimizes contamination by sealing the substrate holder during processing, evacuating spaces, and controlling pressure and flow, resulting in a cleaner environment for substrate transfer and film deposition, thereby reducing the risk of contamination and improving film quality.
Implementation Method 1
a power source coupled to the processing chamber, and configured to couple power to the first process material, or the second process material, or both in the process space to facilitate the formation of plasma
Implementation Method 2
a second pressure control system coupled to the process space and configured to evacuate the process space during processing
Data Source
AI summary
A plasma enhanced atomic layer deposition (PEALD) system is described, wherein the system comprises a processing space and a high vacuum, ultra-clean transfer space. During processing, the substrate to which the thin conformal film is formed is exposed to the processing space. During substrate transfer, the substrate is exposed to the high vacuum space. Processing gases are introduced sequentially and alternately to the process chamber and the pressures and gas flows within, to and from, and between the process chamber and the high vacuum transfer space are controlled to keep the transfer space ultra-clean.


