Per-Lane Duty Cycle Correction for Memory DQ Timing

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Solution Overview

Problem

Existing semiconductor memory devices have fixed, non-configurable circuitry for generating phase controlled internal clock signals, which limits their ability to adjust timing characteristics in response to channel effects like noise and crosstalk, affecting the operation of external devices.

Innovation Solution

Incorporating configurable timing circuitry, such as a phase splitter and selective capacitive loading circuitry, at each DQ pin to adjust the duty cycle of the phase controlled internal clock signal, allowing for real-time tuning of timing characteristics to match external device operations while reducing power and area consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If fixed, non-configurable circuitry is used to generate phase controlled internal clock signals, then device complexity is reduced, but adaptability to different timing requirements deteriorates

Engineering Contradiction:
Improvecircuitry complexityVSAvoidtiming adjustment capability
Core Design Contradiction:
Device complexityVSAdaptability or versatility

Solution Approach 1:

The patent implements dynamic duty cycle correction by making the clock signal generation circuitry configurable after manufacture. The system transitions from fixed circuitry to dynamically adjustable circuitry that can modify timing characteristics in response to channel effects and external device requirements, resolving the contradiction between simplicity and adaptability.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the timing parameters (duty cycle, phase) of the internal clock signal from fixed values to configurable parameters. By allowing these parameters to be adjusted based on operating conditions and external device requirements, the system achieves adaptability without significantly increasing overall device complexity.

Inventive Principle:
Principle #35Parameter changes

2Adaptability or versatility

If configurable timing circuitry is added to adjust duty cycle, then adaptability improves, but device complexity increases

Engineering Contradiction:
Improvetiming configuration flexibilityVSAvoidcircuitry complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent segments the duty cycle correction functionality into lane-specific configurations rather than requiring global reconfiguration. Each DQ pin can have independent timing adjustments, which distributes the complexity across multiple simple, identical modules rather than one complex centralized unit, thereby improving adaptability with minimal complexity increase.

Inventive Principle:
Principle #1Segmentation

3Reliability

If duty cycle is adjusted to correct timing characteristics, then signal integrity improves, but power consumption increases

Engineering Contradiction:
Improvesignal integrityVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent adjusts timing parameters (duty cycle, phase) to optimize signal integrity for each lane based on measured channel effects. By making targeted, minimal adjustments only where needed rather than globally changing all timing parameters, the system improves signal integrity while minimizing the additional power consumption required for adjustment.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS10608621B2Per lane duty cycle correction
Publication Date: 2020.03.31 MICRON TECHNOLOGY INC
  • US10608621B2 patent drawing
  • US10608621B2 patent drawing
  • US10608621B2 patent drawing

AI summary

The present disclosure relates generally to improved systems and methods for control of one or more timing signals in a memory device. More specifically, the present disclosure relates to configurable duty cycle correction at one or more DQ pins (e.g., data input/output (I/O) pins) of the memory device. For example, the memory device may include a configurable phase splitter and/or selective capacitive loading circuitry implemented to adjust the duty cycle of a timing signal at one or more DQ pins during and/or after manufacture of the memory device. Accordingly, the memory device may include increased flexibility and granularity of control over the one or more timing signals.