Per-Pixel Detector Bias Control via Floating Gate Injection

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Detector bias non-uniformity across an imaging array affects the performance and yield of infrared imagers, leading to unusable pixels and degraded image quality, particularly due to variations in detector and transistor characteristics.

Innovation Solution

A pixel circuit with a floating gate injection device that controls the flow of charge from an integration capacitor to a detector, allowing for per-pixel bias voltage adjustment through a control voltage stored on the gate of the floating gate device, which can be individually programmed to address non-uniformity issues.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a fixed bias voltage is used for the detector, then the circuit design is simple, but detector bias non-uniformity across the array degrades performance and yield

Engineering Contradiction:
Improvecircuit design complexityVSAvoiddetector performance uniformity
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent implements per-pixel bias control by storing a unique control voltage VT in the floating gate of each pixel's injection transistor. This allows each pixel to have customized bias characteristics tailored to its specific detector and transistor parameters, resolving the non-uniformity issue while maintaining overall system simplicity

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The control voltage VT is pre-programmed into the floating gate during or after fabrication based on measured detector and transistor characteristics. This preliminary customization enables each pixel to operate optimally without requiring complex real-time adjustment circuitry during operation

Inventive Principle:
Principle #10Preliminary action

2Reliability

If per-pixel bias control is implemented, then detector performance uniformity is improved, but device complexity increases

Engineering Contradiction:
Improvedetector performance uniformityVSAvoidcircuit design complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The floating gate structure serves as an intermediary that stores the control voltage VT and translates it into the appropriate bias condition for each pixel's injection transistor. This mediator approach enables per-pixel customization without requiring complex control circuitry for each pixel

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent changes the electrical parameter (control voltage VT) stored in the floating gate to adjust the bias characteristics of each pixel. By modifying this single parameter during programming, optimal performance is achieved for each pixel without changing the physical structure or adding complex circuitry

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution improves imaging performance and yield by allowing each pixel to operate optimally, reducing the impact of detector and transistor variations, and maintaining optimal bias conditions, thereby enhancing the overall imaging quality.

Implementation Method 1

The floating gate injection device has a gate, a source electrically coupled to the detector at a first node, and a drain electrically coupled to the integration capacitor. The gate has a control voltage (VT) stored therein to set to a per-pixel bias gate voltage

Methodology Applied
Scientific EffectFloating gate voltage storage: Capacitance

Data Source

PatentUS11561132B2Per-pixel detector bias control
Publication Date: 2023.01.24 RAYTHEON CO
  • US11561132B2 patent drawing
  • US11561132B2 patent drawing
  • US11561132B2 patent drawing

AI summary

A pixel includes a detector that changes its operating characteristics based on incident energy, an integration capacitor arranged to discharge stored charge through the detector based on changes in the operating characteristics, and an floating gate injection device disposed between the photo-diode and the integration capacitor that controls flow of the charge from the integration capacitor to the detector. The floating gate injection device has a gate, a source electrically coupled to the detector at a first node, and a drain electrically coupled to the integration capacitor. The gate has a control voltage (VT) stored therein to set to a per-pixel bias gate voltage to control a detector bias voltage of the detector at the first node.