Merging transmission lines into one system reduces circuit complexity and power consumption while maintaining accurate time and address information generation.
Merging detection and count circuits in SPAD pixels preserves spatial resolution while reducing manufacturing complexity.
Merging distinct imaging and pulse detection circuits onto one chip reduces pixel weight while maintaining independent signal processing.
Capacitor integration accumulates weak return signals against ambient light noise, enabling accurate depth sensing in bright conditions.
A bridge section integrates heater and breakage detection wiring to enable self-diagnosis of an infrared sensor chip.
A single-photon detector uses a surface-plasmon wavelength-selective surface to resonantly transmit incident light within a passband.
An optical detector applies periodic test voltages below breakdown levels to count dark current pulses, preventing aging degradation failures.
Floating gate injection devices store unique control voltages to adjust per-pixel detector bias, resolving non-uniformity across infrared imaging arrays.
Histogram-based dynamic range control for optical detection devices prevents signal saturation during photon counting.
Segmented optical sensor circuits use transistor arrays and capacitors to distinguish red light from white ambient light, reducing error probability.
Dynamic resistance adjustment achieves full charge carrier removal while maintaining short dead time for high photodetection rates.
Segmented superconducting wires with varying critical current densities resolve photon numbers without full state transition.
A photosensitive transistor array converts optical signals into currents using amplifier modules to cancel background interference, expanding dynamic range.
A meta-lens incorporates a central opening to focus light closer to the incident surface, overcoming phase design limits.
Counter circuit selects count values from high and low sensitivity avalanche photodiodes based on saturation thresholds, simplifying photon counting logic.
Synchronizing sensor integration with display off-periods eliminates interference from emitted light, ensuring accurate ambient light measurements.
An unbalanced beam-splitter system determines photon statistics through intensity measurements at single detectors.
Dual transfer gates separate ambient and signal charges in a lateral drift field photodiode, resolving dimensioning constraints.
Organic insulating films cover photodiode electrodes to prevent short circuits between active layers and lower electrodes.
Sub-band infrared irradiation releases deep traps in directly converting semiconductor layers to enable high photon counting rates.
Ambient light level detection circuitry discriminates reflected laser signals from background noise to improve dynamic range.
Dynamic bias adjustment maintains avalanche triggering while reducing leakage currents from manufacturing variability.
A photodetector uses voltage supplies to equalize photocurrents across paired photodiodes.
A sensor device calculates incident light using a reset circuit and counter to expand dynamic range.
A common light sensing circuit synchronously detects multiple color signals using shared analog-to-digital conversion resources.
Dual threshold superconducting wires segment detection stages to filter environmental noise, enabling accurate single-photon measurement at higher temperatures.
A detection device uses an insulating layer to electrically couple a lower electrode to a transistor while maintaining the photodiode structure.
A digital signal stabilization method updates a center value based on boundary coefficients to reduce output fluctuations.
One-shot control circuits manage quenching transistors to reset SPADs, preventing after-pulse events and improving LIDAR time resolution.
A rasterized metamaterial metal gate MOSFET absorbs terahertz waves to generate electrical signals without external antennas.
A Geiger mode avalanche photodiode integrates a temperature sensor and voltage compensation unit to adjust bias voltage based on operating conditions.
An optical sensor synchronizes image frames with ambient light flicker frequency using photodiode detection and processor counting.
A differential pyroelectric infrared detector circuit uses two separate impedance conversion circuits connected to a differential amplifier.
A photon-number-resolving detector paired with comparators adjusted to distinct reference values generates digital events encoding time and photon count.
Dynamic sensitivity adjustment via spatially varying recharge times prevents saturation in close-range objects while maintaining signal-to-noise ratio.
A photodetection device merges bias circuits across pixels using a selector to reduce area while maintaining independent light detection.
Dynamic voltage adjustment reduces quench time and prevents device saturation, increasing the maximum photon detection rate.
A 3D Gaussian filter converts photo-events into spatial coordinates for real-time imaging.
Segmented photodetectors in series reduce capacitance to overcome the bandwidth-field-of-view trade-off in free-space optical links.
A single-pixel imaging apparatus uses quantum photon pairs to enhance image quality through temporal correlation.
A single photon avalanche diode sensor evaluates dark current pulses to generate switch-off signals for laser radiation protection.
A daylight sensor with a rotatable cover portion directs the lens toward a window after ceiling mounting.
Optical splitters distribute signals to redundant transducers, improving reliability without duplicating the entire system.
Processor subtracts ambient light data from sensor readings to eliminate interference and enhance detection accuracy.
A dual-sensor system uses a bypass switch to isolate the primary detector during active cycles for accurate signal generation.
A first semiconductor layer thinner than 500 nm transmits visible and short-wave infrared light through a light absorbing layer.
A cooktop temperature sensor unit employs a compensation unit to correct dark current errors from photodiodes, enabling direct high-temperature placement.
Dynamic bias control switches avalanche photodiodes between Geiger and linear modes, resolving sensitivity versus dynamic range trade-offs.
Transparent carbon nanotube electrodes replace metal contacts, increasing exposed semiconductor area and sensitivity to weak polarized light.