Perovskite Capacitor Passivation Layer Against Electrode Oxidation

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Solution Overview

Problem

The oxidation of electrodes during the formation of a SrTiO3 dielectric layer in capacitors deteriorates the electrode's function, limiting the mutual consistency and dielectric constant of the layer.

Innovation Solution

Incorporating a Ti-rich passivation layer between the lower electrode and the SrTiO3 dielectric layer, which includes SrxTiyO3 with a higher Ti content, to prevent oxidation and maintain electrode integrity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a SrTiO3 dielectric layer is formed on an SRO electrode to achieve high dielectric constant, then the dielectric constant is improved, but the SRO electrode is oxidized which deteriorates electrode function

Engineering Contradiction:
Improvedielectric constantVSAvoidelectrode oxidation
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A Ti-rich passivation layer is introduced as an intermediary between the SRO electrode and the SrTiO3 dielectric layer. This passivation layer prevents direct contact and oxidation of the SRO electrode during the formation of the SrTiO3 dielectric layer, while still allowing the dielectric layer to form with good mutual consistency. The passivation layer acts as a protective mediator that resolves the contradiction between achieving high dielectric constant and preventing electrode oxidation.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The Ti-rich passivation layer is formed on the SRO electrode before the SrTiO3 dielectric layer is deposited. This preliminary action creates a protective barrier in advance that prevents oxidation of the SRO electrode during subsequent high-temperature processing and dielectric layer formation. By performing this protective action beforehand, the electrode maintains its functionality throughout the fabrication process.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If the crystallinity of the dielectric layer is secured to achieve high capacitance, then the dielectric constant is improved, but the process complexity increases

Engineering Contradiction:
ImprovecrystallinityVSAvoidfabrication process
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The Ti content parameter in the passivation layer is optimized to be greater than Sr content (SrxTiyO3 where y > x), specifically with Ti content of 55% to 70%. This parameter change creates a Ti-rich composition that promotes better crystallinity in the subsequent SrTiO3 dielectric layer during atomic layer deposition. By controlling the compositional parameter of the passivation layer, the crystallinity of the dielectric layer is improved without requiring additional complex fabrication steps.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The Ti-rich passivation layer enhances the crystallinity and mutual consistency of the electrode and dielectric layer, maintaining a high dielectric constant and reducing the likelihood of electrode oxidation during high-temperature processes.

Implementation Method 1

the SRO electrode may be oxidized or natively oxidized, which deteriorates the function of the SRO electrode as an electrode. Accordingly, there is a need or desire for a method of fabricating a capacitor which may more stably form a SrTiO3 dielectric layer on an electrode having good mutual consistency with the SrTiO3 dielectric layer.

Methodology Applied
Scientific EffectOxidation prevention: Oxidation

Implementation Method 2

When a dielectric layer including a perovskite material is used in a capacitor, it is required or desired to secure the crystallinity of the dielectric layer. To this end, it is necessary or desirable to use an electrode showing high mutual consistency with a dielectric layer including a perovskite material.

Methodology Applied
Scientific EffectCrystallinity enhancement: Crystallisation

Data Source

PatentUS12446239B2Capacitor, method of fabricating the capacitor, and electronic device including the capacitor
Publication Date: 2025.10.14 SAMSUNG ELECTRONICS CO LTD
  • US12446239B2 patent drawing
  • US12446239B2 patent drawing
  • US12446239B2 patent drawing

AI summary

A capacitor includes a lower electrode including a perovskite material, an upper electrode spaced apart from the lower electrode, a dielectric layer positioned between the lower electrode and the upper electrode and including a perovskite material, and a passivation layer positioned between the lower electrode and the dielectric layer and including SrxTiyO3 in which a content of Ti is greater than a content of Sr.