Perovskite Memory Pillar Formation via Reverse Integration
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Solution Overview
Problem
Forming Perovskite materials within back end layers of semiconductor devices is challenging due to the difficulty of creating uniform intermediate layers in high aspect ratio trenches, which complicates the growth of ferroelectric Perovskite materials used in memory cells.
Innovation Solution
A reverse process integration flow is used to form Perovskite materials on pillars instead of within trenches, allowing for high-quality growth with an interlayer dielectric process, and locating peripheral memory circuitry in the back end to reduce the size and complexity of memory systems.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If Perovskite materials are formed within back end trenches, then memory cells can be integrated into the backend, but the manufacturing complexity increases due to difficulty in creating uniform intermediate layers in high aspect ratio trenches
Solution Approach 1:
The patent inverts the conventional approach by forming Perovskite materials on pillars rather than within trenches. This reversal eliminates the need to create uniform intermediate layers in high aspect ratio trenches, thereby reducing manufacturing complexity while still enabling memory cell integration in the backend
Solution Approach 2:
The patent transitions from a planar/trench-based structure to a three-dimensional pillar structure. By growing Perovskite materials vertically on pillars, the invention achieves memory cell integration while avoiding the manufacturing difficulties associated with trench filling and intermediate layer formation
2Use of energy by moving object
If Perovskite materials are used in memory cells, then switching voltage is reduced, but the formation process becomes more complex
Solution Approach 1:
By inverting the formation approach from trench-based to pillar-based, the patent simplifies the overall formation process while maintaining the low switching voltage benefit of Perovskite materials. The pillar structure allows for more straightforward material deposition and processing
3Volume of moving object
If memory cell size is reduced, then memory density increases, but the design constraints become more stringent
Solution Approach 1:
The patent utilizes vertical dimension on pillars to achieve compact memory cell footprints. By growing Perovskite materials vertically, the design can reduce planar dimensions while maintaining functional performance, thereby increasing density without excessively tightening design constraints
Solution Approach 2:
The invention changes the structural parameters from trench-based to pillar-based geometry, which fundamentally alters the design space and constraints. This parameter change enables compact cell sizes with more manageable design requirements
Data Source
AI summary
An embodiment includes a system comprising: first, second, third, fourth, fifth, and sixth layers, (a) the second, third, fourth, and fifth layers being between the first and sixth layers, and (b) the fourth layer being between the third and fifth layers; a formation between the first and second layers, the formation including: (a) a material that is non-amorphous; and (b) first and second sidewalls; a capacitor between the second and sixth layers, the capacitor including: (a) the third, fourth, and fifth layers, and (b) an electrode that includes the third layer and an additional electrode that includes the fifth layer; and a switching device between the first and sixth layers; wherein: (a) the first layer includes a metal and the sixth layer includes the metal, and (b) the fourth layer includes a Perovskite material. Other embodiments are addressed herein.