Phase Change Memory Cell Crystallinity via Laser Annealing
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Solution Overview
Problem
Next-generation memory devices, such as PRAM and RRAM, face challenges in maintaining resistance values without current or voltage supply, and existing semiconductor devices lack efficient data storage solutions with improved electrical properties and reliability.
Innovation Solution
A semiconductor device design featuring a semiconductor substrate with memory cell structures and dummy cell structures, utilizing phase change material layers that change phases during operations, and a laser annealing process to enhance crystallinity and density of the data storage material patterns, resulting in improved electrical properties and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If phase change material layers are used for data storage, then resistance value can be changed and maintained, but reliability is insufficient without efficient data storage solutions
Solution Approach 1:
The patent applies parameter changes by controlling the phase state of the phase change material layer between crystalline and amorphous phases to achieve different resistance values for data storage. The laser annealing process modifies the physical parameters (temperature, crystallinity) of the material to enhance its electrical properties and reliability for reliable data retention.
2Reliability
If laser annealing process is applied to enhance crystallinity, then electrical properties and reliability are improved, but manufacturing complexity increases
Solution Approach 1:
The laser annealing process is performed as a preliminary action before final device assembly to pre-enhance the crystallinity and electrical properties of the phase change material layer. This preliminary treatment ensures reliable electrical characteristics are established early in the manufacturing process, simplifying subsequent steps.
3Manufacturing precision
If phase change material layers are crystallized to increase resistance, then data storage capability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The laser annealing process employs periodic pulsed laser irradiation to control the crystallization of the phase change material layer. By applying laser energy in controlled periodic pulses, the phase transition from amorphous to crystalline state is achieved with precise control over resistance values, maintaining manufacturing precision while managing process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves enhanced electrical properties and reliability by increasing resistance and threshold voltage through crystallization of phase change material layers, improving yield and manufacturing reliability.
Implementation Method 1
a data storage material pattern disposed between the first conductive lines and the second conductive lines and including a phase change material layer
Implementation Method 2
a data storage material of which a resistance value may change, depending on a current or a voltage and which may maintain a resistance value even when a current or a voltage is not supplied
Implementation Method 3
a laser annealing process to enhance crystallinity and density of the data storage material patterns
Implementation Method 4
a laser annealing process to enhance crystallinity and density of the data storage material patterns, resulting in improved electrical properties and reliability
Implementation Method 5
The phase change material layer of the dummy pattern includes a crystalline phase portion and an amorphous phase portion. At a cross section of the phase change material layer of the dummy pattern, an area of the crystalline phase portion is larger than an area of the amorphous phase portion
Data Source
AI summary
A semiconductor device includes a substrate; first conductive lines extending in a first direction; second conductive lines extending in a second direction; memory cell structures between the first conductive lines and the second conductive lines; and dummy cell structures that are electrically isolated and between the first conductive lines and the second conductive lines. The memory cell structures include a data storage material pattern including a phase change material layer; and a selector material pattern overlapping the data storage material pattern in a vertical direction. The dummy cell structures include a dummy pattern including a phase change material layer. The phase change material layer of the dummy pattern includes a crystalline phase portion and an amorphous phase portion. At a cross section of the phase change material layer of the dummy pattern, an area of the crystalline phase portion is larger than an area of the amorphous phase portion.