Phase Change Memory Plug Electrode Contact Design

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Solution Overview

Problem

Phase change memory devices with metal patterns contacting the entire top surface of the phase change material suffer from characteristic deterioration and increased power consumption due to metal diffusion, leading to malfunction and difficulty in integration.

Innovation Solution

A phase change memory device design featuring a mold insulating layer, plug electrodes, a phase change pattern, and an interconnection-plug structure, where the contact area between the second plug electrode and the phase change pattern is broader than the first, minimizing metal contact and reducing the program region volume, along with a capping insulating pattern and insulating spacer to minimize heat loss.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the phase change material is thickly formed to prevent metal diffusion, then reliability is improved, but the program region volume increases leading to higher power consumption

Engineering Contradiction:
Improvecharacteristic stabilityVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent transitions from a planar contact structure to a three-dimensional structure where the second plug electrode extends vertically through the mold insulating layer to contact the phase change material. This vertical extension reduces the lateral contact area between metal and phase change material, preventing metal diffusion while maintaining thin phase change material thickness, thus resolving the contradiction between reliability and power consumption

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The mold insulating layer serves as an intermediary barrier between the first plug electrode and the phase change material, preventing direct metal contact and diffusion. This allows the use of thin phase change material without metal contamination, thereby reducing program region volume and power consumption while maintaining reliability

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If the phase change material is thickly formed to prevent metal diffusion, then reliability is improved, but device integration becomes difficult

Engineering Contradiction:
Improvecharacteristic stabilityVSAvoidintegration difficulty
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent employs vertical stacking of multiple layers (mold insulating layer, phase change material layer, top insulating layer) in the third dimension, allowing thin phase change material to be effectively isolated from metal electrodes. This enables high-density integration while preventing metal diffusion through the layered structure

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The device is segmented into distinct functional layers: mold insulating layer for isolation, phase change material layer for data storage, and top insulating layer for protection. This segmentation allows each layer to be optimized independently, enabling thin phase change material usage and high integration density while maintaining reliability

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design prevents characteristic deterioration, reduces power consumption, and enables high integration density by minimizing heat loss and maintaining a thin phase change pattern thickness, thus enhancing the performance and integration of phase change memory devices.

Implementation Method 1

A state of a phase change material can change into a crystalline state or an amorphous state by varying a temperature of a supplied heat and/or a heat supplying time

Methodology Applied
Scientific EffectPhase change: Phase Change

Implementation Method 2

A heat for changing a state of the phase change material is Joule's heat. Joule's heat is generated using the amount of an operation current that flows through the phase change material

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Data Source

PatentUS7638788B2Phase change memory device and method of forming the same
Publication Date: 2009.12.29 SAMSUNG ELECTRONICS CO LTD
  • US7638788B2 patent drawing
  • US7638788B2 patent drawing
  • US7638788B2 patent drawing

AI summary

Provided are a phase change memory device and a method of forming the same. According to the phase change memory, a first plug electrode and a second plug electrode are spaced apart from each other in a mold insulating layer. A phase change pattern is disposed on the mold insulating layer. The phase change pattern contacts a top of the first plug electrode and a first potion of a top of the second plug electrode. An interconnection is electrically connected to a second portion of the top of the second plug electrode.