Solid-State Devices TRIZ Cases

A power module periphery circuit detects gate leakage current using NMOS and PMOS transistors with a comparator to control device operation.

Hydrogen ion bombardment reduces metal oxides on TFT substrates, preventing surface oxidation that causes poor contact and high production costs.

A light-emitting element uses a triarylamine-based exciplex to transfer energy to a fluorescent substance.

A partition wall stabilizes the electrical connection between an auxiliary electrode and a cathode in an organic light emitting display.

Segmenting sealing films and applying composite materials protects terminal wiring from etching damage, improving manufacturing yield.

Nitride barrier layers and liners prevent hydrogen degradation of memory elements, ensuring stable retention despite added manufacturing complexity.

An electrostatic chuck replaces mechanical resin bonding with embedded electrodes in a planarized synthetic resin sheet to eliminate thickness variations.

CMP flattens the lower electrode in a buried gate structure, eliminating via seams that degrade MTJ characteristics.

Tapered trench field regions disperse electric fields to increase breakdown voltage and withstand transient reverse voltages.

Thermal-conductive transparent liquid fills the sealed LED package space, improving heat dissipation and preventing overheating damage.

Segmenting electroforming voltages protects device endurance while maintaining programming speed and yield for RRAM arrays.

Segmented iLED pixels average material variability to reduce fixed pattern noise and enhance display brightness.

Adhesive tape secures low-flatness wafers to support members, preventing chip separation during cutting.

Segmented inner surface regions in an optical element direct radiation into a specific half-space, reducing cross-talk and enhancing efficiency.

A polysilicon resistor structure uses segmented metal-semiconductor compound regions to adjust the temperature coefficient of resistance.

A first metal layer with grid-like grooves creates a flat surface for the organic light emitting diode electrode.

Varying penetration hole sizes in a multilayer protection film shield touch screen panels from etchant damage while enabling substrate thinning.

Stacked pixel and logic wafers resolve contradictions between quantum efficiency, process tuning precision, and gross die count.

Protrusions from the variable resistance layer toward recessed gates enable bipolar switching, improving electric characteristics and data storage reliability.

A boron nitride hard mask paired with a silicon oxide film enables precise pattern transfer via nanoimprint and reactive ion etching.

Recessed reflective patterns redirect oblique light to prevent leakage and improve OLED brightness.

Alternating voltage on a bottom layer beneath transistors reduces afterimages in large flat panels without adding structural complexity.

Optimized electrode spacing in a microcavity display structure improves luminance and efficiency while maintaining compact device size.

A semiconductor fabrication method uses a single photomask to define recesses in dense and isolation regions for FinFET structures.

Exposed semiconductor layers in the epitaxy structure allow direct electrode bonding, eliminating wire breakage risks and improving heat dissipation.

A phase change memory device uses a mold insulating layer to space plug electrodes and limit metal contact with the phase change pattern.

A carbon-containing semiconductor layer suppresses boron diffusion in CMOS image sensors.

A phase change random access memory device uses air gaps between bit lines to suppress electrical interference.

Thermal evaporation films with metal particles reduce internal reflection and enhance light coupling efficiency in organic light-emitting diodes.

Two-sided insulating layer patterning creates separated coplanar metallic bonding layers, eliminating etch resolution limits and reducing package size.

An etch stop layer protects pipe coupling transistors from damage during slit formation, enabling reliable memory block division.

Segmenting the solvent system into high and low boiling point components resolves the contradiction between inkjet printing characteristics and film flatness.

Segmented LED units on a single substrate distribute electrode area across multiple discrete elements to maintain light-emitting efficiency.

A ferroelectric gate structure enables precise threshold voltage tuning in semiconductor devices.

Amorphous boron passivates silicon defects to prevent electron recombination, maintaining high quantum efficiency under deep UV radiation.

Epitaxial growth creates continuous waveguides within transistor regions, eliminating separate fabrication processes and reducing integration complexity.

Three-dimensional semiconductor pillars increase luminance per unit area, resolving the trade-off between manufacturing precision and device complexity.

Sinking a deeper, wider semiconductor region into the body reduces leakage current and expands radiation-sensitive surface area.

An image sensor overlaps a display region to enhance light sensitivity while increasing device complexity.

Embedding bonding connection lines within an interposer substrate eliminates fragile pad formation, improving production yield and reliability.

A stacked light emitting apparatus uses an upper substrate opening to expose the device.

Grounded electromagnetic interference shields contact segmented conductive frames to reduce emissions without increasing package size.

Segmented wafer-level preparation and vertical routing through trench substrates reduce interconnect lengths, lowering chip power consumption.

OLED inspection patterns on display substrates verify layer alignment, eliminating additional substrates and reducing manufacturing costs.

Silicon nitride layers prevent fluorine diffusion from conductive structures, suppressing void generation in inter-layer insulating layers.

Pixel defining film openings and dam structures prevent resin overflow into pixel areas, maintaining optical integrity.

Alternating electrode periods mitigate Moiré fringes and bright stripes while maintaining luminance uniformity.

Sidewall protective layers prevent plasma contamination and enhance oxygen concentration to improve high-temperature data retention.

Composite electrode structures and inert atmosphere barriers prevent pad corrosion, enhancing light efficiency and reliability.