Semiconductor Pillars for High-Resolution Displays
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Solution Overview
Problem
Conventional semiconductor displays face limitations in achieving high resolution and efficient manufacturing, particularly in terms of luminance per unit area and size of individual image points, due to the use of two-dimensional semiconductor layers.
Innovation Solution
The development of a semiconductor display utilizing densely packed, individually addressable semiconductor pillars with a III-V semiconductor material system, where each pillar includes a core, shell, and active layer for radiation generation, allowing for high-density pixel formation and flexible grouping for improved resolution and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If two-dimensional semiconductor layers are used, then manufacturing is simpler, but resolution and luminance per unit area are limited
Solution Approach 1:
The patent transitions from two-dimensional semiconductor layers to three-dimensional semiconductor pillars. Each pillar has a vertical structure with base, side surface, and top surface, enabling light emission from multiple surfaces simultaneously. This dimensional change increases the effective light-emitting area per pixel, thereby improving resolution and luminance per unit area while maintaining manufacturing efficiency through scalable pillar fabrication processes.
2Manufacturing precision
If individual pixel size is reduced for high resolution, then display density increases, but luminance per pixel decreases
Solution Approach 1:
By utilizing three-dimensional pillars with light emission from base, side surfaces, and top surface, the patent increases the total light-emitting area per pixel. This allows smaller pixels to maintain sufficient luminance output, as the vertical dimension compensates for the reduced horizontal footprint, enabling high pixel density without sacrificing brightness.
Solution Approach 2:
The semiconductor pillar employs a composite structure with different materials for the base, side surface, and top surface regions. This allows optimization of each surface's light-emitting properties, with the active layer configured to emit light efficiently from all three surfaces, thereby maintaining high luminance in compact pixel structures.
3Manufacturing precision
If semiconductor pillars are densely packed, then pixel density and resolution improve, but manufacturing complexity increases
Solution Approach 1:
The patent divides the semiconductor structure into discrete, modular pillars that can be fabricated using standardized processes. Each pillar is a self-contained unit with defined base, side, and top surfaces, allowing for systematic arrangement and scaling. This segmentation enables dense packing while maintaining manufacturing simplicity through repetitive, modular fabrication units.
Solution Approach 2:
The patent controls key parameters such as pillar diameter, height, and spacing to optimize both density and manufacturability. By adjusting these geometric parameters within specific ranges, the design achieves high pixel density while remaining compatible with existing semiconductor fabrication processes, avoiding excessive manufacturing complexity.
4Illumination intensity
If three-dimensional pillar structure is used, then luminance and resolution improve, but device complexity increases
Solution Approach 1:
The patent employs three-dimensional pillars with light emission from base, side surfaces, and top surface, creating a vertically integrated light source. This multi-surface emission architecture increases total luminous output compared to planar structures, as light is generated and emitted from multiple spatial locations within each pixel, enhancing overall display brightness and resolution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables a significant increase in the density of addressable pixels, achieving higher luminance and scalability while maintaining efficient manufacturing, with the ability to produce smaller, high-resolution image points and larger, brighter displays compared to conventional methods.
Implementation Method 1
The active layer, for example a single quantum well structure or a multiple quantum well structure, is located continuously between the respective semiconductor core and the associated semiconductor shell. The active layer is adapted for radiation generation, in particular for the generation of visible light such as blue light.
Implementation Method 2
The semiconductor pillars each include a semiconductor core of a first conductivity type. In particular, the semiconductor core is respectively made of n-doped semiconductor materials. The semiconductor pillars each include a semiconductor shell made of a semiconductor material which has a second conductivity type different to the first. In particular, the semiconductor shells are made of a p-conductive semiconductor material.
Data Source
AI summary
A semiconductor display may include a multiplicity of semiconductor pillars as well as first contact strips and second electrical contact strips. The semiconductor pillars each comprise a semiconductor core of a first conductivity type and a semiconductor shell of a second conductivity type different from the first conductivity type, as well as an active layer between them for radiation generation. The semiconductor pillars each comprise an energization shell which is applied onto the respective semiconductor shell for energization. The semiconductor pillars can be electrically driven independently of one another individually or in small groups by means of the first and second electrical contact strips.