Resistive Random Access Memory Sidewall Protection

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Solution Overview

Problem

The manufacturing process of resistive random access memory devices is hindered by plasma damage and contamination of the sidewalls of the metal-insulating layer-metal structure, which affects conductive paths and deteriorates high-temperature data retention.

Innovation Solution

Incorporating a sidewall protective layer containing metal or semiconductor materials between the resistance-switching layer and the top electrode, which also serves as an oxygen supply layer, to prevent plasma damage, enhance oxygen concentration, and improve data retention by concentrating filament structures at the center, thereby improving durability and yield.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If plasma processing is used in the manufacturing process, then manufacturing efficiency is improved, but plasma damage and contamination occur on the sidewalls of the metal-insulating layer-metal structure

Engineering Contradiction:

Improvemanufacturing efficiencyVSAvoidplasma damage and contamination

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

A sidewall protective layer is introduced as an intermediary component between the resistance-switching layer and the top electrode. This protective layer acts as a mediator that shields the sidewalls from plasma damage and contamination during manufacturing processes, while allowing the plasma processing to continue for manufacturing efficiency.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The sidewall protective layer is formed in advance before the plasma processing steps. This preliminary protective measure prevents plasma damage and contamination from occurring in the first place, allowing subsequent manufacturing processes to proceed without compromising sidewall integrity.

Inventive Principle:

Principle #10Preliminary action

2Device complexity

If the metal-insulating layer-metal structure is used, then structural simplicity is achieved, but high-temperature data retention deteriorates due to sidewall damage

Engineering Contradiction:

Improvestructural simplicityVSAvoidhigh-temperature data retention

Core Design Contradiction:

Device complexityVSReliability

Solution Approach 1:

The sidewall protective layer is selectively applied only to the sidewall regions of the metal-insulating layer-metal structure, providing localized protection where plasma damage occurs most severely. This maintains the overall structural simplicity while improving high-temperature data retention in the critical sidewall areas.

Inventive Principle:

Principle #3Local quality

3Ease of manufacture

If conventional manufacturing processes are used, then manufacturing cost is reduced, but yield and stability deteriorate due to sidewall contamination

Engineering Contradiction:

Improvemanufacturing costVSAvoidyield and stability

Core Design Contradiction:

Ease of manufactureVSProductivity

Solution Approach 1:

The sidewall protective layer serves as a low-cost intermediary component that can be integrated into existing manufacturing processes using standard deposition techniques. This additional layer prevents sidewall contamination, thereby improving device yield and stability without requiring expensive process changes.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution significantly enhances high-temperature data retention and durability of memory devices by preventing plasma damage and contamination, while improving the stability and yield of memory devices through controlled oxygen distribution and filament formation.

Implementation Method 1

sidewalls of the metal-insulating layer-metal structure are subject to plasma damage or contamination by impurities

Methodology Applied

Scientific EffectPlasma damage prevention: Plasma

Implementation Method 2

The sidewall protective layer containing metal or semiconductor is disposed at the sidewalls of the resistance-switching layer, and the sidewalls of the resistance-switching layer is doped with the metal or semiconductor from the sidewall protective layer

Methodology Applied

Scientific EffectOxygen diffusion: Diffusion

Implementation Method 3

improve data retention by concentrating filament structures at the center

Methodology Applied

Scientific EffectFilament formation:

Data Source

PatentUS10593877B2Resistive random access memory

Publication Date: 2020.03.17 WINBOND ELECTRONICS CORP

AI summary

A resistive random access memory is provided. The resistive random access memory includes a bottom electrode over a substrate, a top electrode, a resistance-switching layer, an oxygen exchange layer, and a sidewall protective layer. The top electrode is disposed over the bottom electrode. The resistance-switching layer is disposed between the bottom electrode and the top electrode. The oxygen exchange layer is disposed between the resistance-switching layer and the top electrode. The sidewall protective layer containing metal or semiconductor is disposed at sidewalls of the resistance-switching layer, and the sidewalls of the resistance-switching layer is doped with the metal or semiconductor from the sidewall protective layer.