Phosphoric Acid Crystallization for Low-Grade Feed Purification

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Solution Overview

Problem

Existing methods for producing high-purity phosphoric acid are costly and inefficient, requiring high-quality phosphorite reserves and complex processes, and fail to effectively remove impurities from low-grade phosphoric acid for semiconductor manufacturing.

Innovation Solution

A method involving temperature control and quantum behavior manipulation to form phosphoric acid crystals, using a cooling device and phosphoric acid seeds to suppress impurity trapping, followed by high-temperature treatment to remove surface impurities, achieving high-purity phosphoric acid from low-grade sources.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the dry method of extracting yellow phosphorous from high-quality phosphorite is used, then high-purity phosphoric acid can be produced, but process cost increases and high-quality phosphorite reserves are depleted

Engineering Contradiction:
Improvephosphoric acid purityVSAvoidprocess cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent changes the temperature parameter during crystallization to control the behavior of impurities. By maintaining the crystallization temperature above the melting point of specific impurities (such as 20°C for aluminum phosphates), the impurities remain in the liquid phase while phosphoric acid crystallizes, achieving purification without requiring expensive dry method processing

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent utilizes phase transition differences between phosphoric acid and impurities during cooling crystallization. Phosphoric acid transitions from liquid to solid crystals while impurities with higher melting points remain liquid, enabling separation based on phase behavior rather than complex chemical processing

Inventive Principle:
Principle #36Phase transitions

2Device complexity

If crystallization is performed without phosphoric acid seed, then the process is simpler, but crystallization requires temperature of 40°C or lower which increases cost and time

Engineering Contradiction:
Improvecrystallization process simplicityVSAvoidcrystallization temperature
Core Design Contradiction:
Device complexityVSTemperature

Solution Approach 1:

The patent introduces phosphoric acid seeds before crystallization to initiate crystal formation at higher temperatures. The seeds provide pre-formed crystal structures that guide the crystallization process, eliminating the need for extreme cooling temperatures while maintaining crystallization efficiency

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

Phosphoric acid seeds act as intermediaries that facilitate crystallization at manageable temperatures. The seeds serve as nucleation sites that enable crystal growth without requiring the system to cool to 40°C or below, thus reducing energy consumption and process complexity

Inventive Principle:
Principle #24Intermediary (Mediator)

3Productivity

If impurities are trapped inside phosphoric acid crystals during crystallization, then crystal formation is faster, but purity decreases

Engineering Contradiction:
Improvecrystal formation rateVSAvoidphosphoric acid purity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies local quality control by maintaining specific temperature conditions (above 20°C) during different stages of crystallization. This temperature control creates local environmental differences that prevent impurity incorporation into crystals while allowing rapid crystal formation, achieving both high purity and high productivity

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Economically produces high-purity phosphoric acid with reduced impurities, particularly Al, K, and Cu, suitable for semiconductor manufacturing, by controlling crystal growth and removing trapped impurities through temperature and quantum behavior manipulation.

Implementation Method 1

using a temperature difference between an introduced phosphoric acid raw material and a cooling device

Methodology Applied
Scientific EffectCooling: Cooling

Implementation Method 2

forming phosphoric acid crystals by stirring the introduced phosphoric acid raw material and the phosphoric acid seed

Methodology Applied
Scientific EffectCrystallization: Crystallisation

Implementation Method 3

controlling nucleation and crystal growth rates of crystals

Methodology Applied
Scientific EffectNucleation: Nucleation

Implementation Method 4

melting some of the formed phosphoric acid crystals through additionally introducing a high-temperature phosphoric acid raw material

Methodology Applied
Scientific EffectHeating: Heating

Implementation Method 5

separating impurities from a phosphoric acid raw material containing a lot of impurities

Methodology Applied
Scientific EffectDensity gradient separation: Density Gradient

Data Source

PatentUS20250382174A1Method for producing high-purity phosphoric acid through quantum behavior control
Publication Date: 2025.12.18 RAM TECHNOLOGY CO LTD

AI summary

The present disclosure relates to a method for producing high-purity phosphoric acid through a quantum behavior control, and more particularly, to a method for producing high-purity phosphoric acid capable of obtaining high-purity phosphoric acid from low-grade phosphoric acid economically and industrially by obtaining phosphoric acid crystals by, using a temperature difference between an introduced phosphoric acid raw material and a cooling device, controlling crystal growth position and rate of the phosphoric acid crystals through changes in the molecular or quantum behaviors of phosphoric acid, water molecules and impurities in the phosphoric acid raw material to suppress a phenomenon of impurities being trapped inside the phosphoric acid crystals, and melting some of the formed phosphoric acid crystals through additionally introducing a high-temperature phosphoric acid raw material to remove the impurities trapped inside the crystals.