Photo Mask Shadowing Elements for Pattern Dimension Correction
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Solution Overview
Problem
The semiconductor manufacturing process faces challenges in achieving precise pattern correction due to variations in light intensity and lens aberrations during photolithography, leading to non-uniformity of pattern dimensions as design rules are reduced.
Innovation Solution
A method involving the creation of shadowing maps on a photo mask with varying unit section areas and densities of shadowing elements to correct pattern dimensions, where the shadowing regions are strategically positioned to adjust light intensity and reduce dimension variations, allowing for precise correction of patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography is used for pattern definition, then the manufacturing process is simple, but the pattern dimensions vary due to light intensity variation and lens aberration
Solution Approach 1:
The photo mask is segmented into multiple layers (first photo mask layer and second photo mask layer), where each layer contains specific shadowing regions that address different aspects of pattern correction. This segmentation allows independent optimization of each layer's function while maintaining overall pattern uniformity
Solution Approach 2:
The invention transitions from a single-plane correction approach to a multi-dimensional solution by adding shadowing regions at different depths (different distances from the first surface) and different areas. This dimensional expansion enables more precise control over light intensity distribution across the patterned area
2Productivity
If design rules are reduced for higher integration, then device integration is improved, but pattern dimension non-uniformity increases
Solution Approach 1:
Shadowing regions are selectively placed in specific areas (first area and second area) of the photo mask rather than uniformly across the entire mask. Each shadowing region has locally optimized properties (area, distance from surface) tailored to the specific correction needs of that region, enabling precise dimensional control at different locations
Solution Approach 2:
The invention varies multiple parameters of the shadowing regions including area size, distance from the first surface, and material composition. By changing these parameters across different shadowing regions, the system adapts to different local requirements for pattern correction, maintaining precision as design rules scale down
3Manufacturing precision
If multiple shadowing maps with different unit section areas are used, then pattern correction precision is improved, but manufacturing complexity increases
Solution Approach 1:
The shadowing correction is segmented into multiple discrete shadowing regions with different areas, each corresponding to specific unit sections in the shadowing maps. This segmentation allows the complex correction task to be divided into manageable regions that can be independently controlled and manufactured
Solution Approach 2:
Rather than applying uniform correction across the entire photo mask, the invention applies partial correction only to specific areas where dimension non-uniformity occurs. The shadowing regions are strategically placed only in areas requiring correction, reducing overall manufacturing complexity while maintaining precision where needed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables precise correction of pattern dimensions, optimizing integration and reducing correction time, thereby improving the throughput and accuracy of semiconductor device manufacturing.
Implementation Method 1
shadowing elements in the transparent substrate... intensity of the light transferred to the mask patterns overlapping with the shadowing regions may be reduced
Data Source
AI summary
A method of correcting patterns includes attaining a correcting amount distribution map using a photo mask, the photo mask including a transparent substrate having first and second surfaces opposite to each other and a mask pattern on the first surface, attaining a plurality of shadowing maps based on the correction amount distribution map, each of the shadowing maps including a unit section having a different plane area, and forming a plurality of shadowing regions with shadowing elements in the transparent substrate of the photo mask using respective shadowing maps.