Photo Resist Profile Control via Shield Layer Segmentation
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Solution Overview
Problem
Photo resist (PR) structures often develop a tapered profile during ion bombardment, leading to undesired ion implantation in base materials, which affects implant quality by allowing ions to enter unintended locations.
Innovation Solution
A method involving the formation of multiple PR layers and shield layers with strategically created windows to control the PR profile, resulting in a substantially rectangular profile that mitigates ion implantation into undesired areas, including the use of ashing and etching processes to define these windows.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single PR layer is formed on the base material, then the process is simple and quick, but the profile becomes tapered allowing ions to enter undesired locations
Solution Approach 1:
The single PR layer is segmented into multiple PR layers (first PR layer, second PR layer) separated by a shield layer. This segmentation allows each layer to perform specific functions: the first PR layer provides initial protection, the shield layer maintains the rectangular profile by preventing tapering, and the second PR layer provides additional protection. Together they achieve a substantially rectangular profile that prevents ion leakage while maintaining process feasibility.
Solution Approach 2:
The shield layer acts as an intermediary between the first and second PR layers. It prevents the second PR layer from tapering during ion bombardment by providing structural support, thereby maintaining the substantially rectangular profile of the first PR layer. This intermediary shield layer is crucial for achieving the desired profile precision without excessive complexity.
2Manufacturing precision
If multiple PR layers and shield layers are formed with windows, then the PR profile rectangularity is improved, but the process complexity increases
Solution Approach 1:
Windows are formed in the PR layers and shield layer before the ion bombardment process. This preliminary action defines the precise locations where ions should penetrate, allowing the majority of the PR structure to maintain its protective rectangular profile. The windows are strategically positioned to allow necessary ion implantation while the surrounding rectangular PR structure prevents unwanted ion leakage into adjacent areas.
Data Source
AI summary
One or more techniques or systems for controlling a profile for photo resist (PR) are provided herein. In some embodiments, a first shield layer is formed on a first PR layer and a second PR layer is formed on the first shield layer. A first window is formed within the second PR layer during a first exposure with a mask. A second window is formed within the first shield layer based on the first window. A third window is formed within the first PR layer during a second exposure without a mask. Because, the third window is formed while the first shield layer and the second PR layer are on the first PR layer, a profile associated with the first PR layer is controlled. Contamination during ion bombardment is mitigated due to the controlled profile.