Photocatalyst Substrate Processing Atomic-Level Removal
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Solution Overview
Problem
Current Chemical Mechanical Polishing (CMP) techniques face challenges in achieving precise control of removal amounts at the atomic level due to macroscopic removal mechanisms and variations, making it difficult to ensure perfect control over polishing rate, pressure, and other factors, especially with the miniaturization of semiconductor processes.
Innovation Solution
A substrate processing apparatus and method utilizing a photocatalyst, which includes a table for holding the substrate, a nozzle for supplying a process liquid, a head for holding the photocatalyst, a conditioner for conditioning the photocatalyst, and moving mechanisms to control the photocatalyst's position, allowing for selective removal from projecting portions of the substrate surface through controlled exposure to excitation light and process liquids.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If CMP is used for planarization, then the surface can be flattened, but the removal amount cannot be controlled at the atomic level due to macroscopic removal mechanism and variations
Solution Approach 1:
The patent replaces the mechanical removal mechanism of CMP with a chemical removal mechanism using photocatalysts. The photocatalyst generates reactive species through light irradiation that chemically remove material from the substrate surface, enabling atomic-level precision control without the macroscopic variations inherent in mechanical polishing
Solution Approach 2:
The patent changes the fundamental parameter of removal mechanism from mechanical to chemical. By controlling light irradiation intensity, photocatalyst activity, and reactive species generation, the removal amount can be precisely controlled at the atomic level, transforming the process from macroscopic to atomic-scale precision
2Manufacturing precision
If polishing rate is significantly decreased to achieve atomic level control, then removal amount control improves, but productivity decreases
Solution Approach 1:
The patent changes the removal mechanism parameter from mechanical to chemical photocatalytic removal. This enables high precision atomic-level control while maintaining high productivity because the chemical reaction rate can be controlled independently of mechanical contact parameters, allowing faster processing without sacrificing precision
Solution Approach 2:
By substituting mechanical polishing with photocatalytic chemical removal, the system achieves both atomic-level precision and high productivity. The chemical reaction can proceed rapidly without the mechanical contact constraints that limit CMP speed when high precision is required
3Manufacturing precision
If polishing pressure is set to extremely low pressure to achieve atomic level control, then removal amount control improves, but the polishing rate becomes too slow
Solution Approach 1:
The patent replaces mechanical pressure-based removal with light-driven photocatalytic chemical removal. This eliminates the direct trade-off between pressure and removal rate, allowing atomic-level precision control through chemical reaction control while maintaining high processing speeds through optimized light intensity and photocatalyst activity
Solution Approach 2:
The patent changes the controlling parameter from mechanical pressure to chemical reaction parameters (light intensity, photocatalyst concentration, reactive species generation). This enables independent control of precision and productivity, as the chemical reaction rate can be optimized without the constraints of mechanical contact physics
4Manufacturing precision
If various factors affecting polishing rate are controlled to ensure atomic level precision, then removal amount control improves, but device complexity and operation difficulty increase
Solution Approach 1:
The patent replaces complex mechanical parameter control with simpler photocatalytic reaction control. Instead of managing multiple interdependent mechanical factors (pressure, velocity, temperature, slurry flow), the system controls chemical parameters (light intensity, photocatalyst activity, reactive species concentration) that offer more direct and independent control over removal rate
Solution Approach 2:
The patent changes from controlling multiple mechanical parameters to controlling chemical reaction parameters. The photocatalytic process allows control through light irradiation intensity and chemical environment, reducing the number of interdependent factors and simplifying the control system for achieving atomic-level precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise control of removal amounts at the atomic level, ensuring selective and efficient planarization of substrates without mechanical damage, by generating reactive species that preferentially remove material from projecting areas, thereby improving the accuracy and control in semiconductor processing.
Implementation Method 1
a head for holding a photocatalyst; a conditioner for conditioning the photocatalyst
Implementation Method 2
generating reactive species that preferentially remove material from projecting areas
Data Source
AI summary
Provided is an apparatus and a method that allow a control of a removal amount at an atomic level and allow a selective removal from a projecting portion of a process target.According to one embodiment, a substrate processing apparatus is provided, and the substrate processing apparatus includes: a table for holding a substrate; a nozzle for supplying a process liquid to a top of the substrate held onto the table; a head for holding a photocatalyst; a conditioner for conditioning the photocatalyst; a first moving mechanism for moving the head in a direction perpendicular to a surface of the table; and a second moving mechanism for moving the head between the table and the conditioner.