Photodetection Optical Stack for Stress Migration Suppression

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Solution Overview

Problem

Photodetection devices with conductor layers are prone to stress migration, which can affect the performance and reliability of optical elements like plasmonic filters and wire grid polarizers.

Innovation Solution

A photodetection device design that incorporates a stacked structure with a first conductor layer, an intermediate layer, and a second conductor layer, where the intermediate layer is higher in rigidity than the conductor layers, to suppress stress migration and maintain optical element performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conductor layer is used in optical elements, then optical functionality is achieved, but stress migration occurs affecting reliability

Engineering Contradiction:
Improvestress migration resistanceVSAvoidstress migration
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

An intermediate layer is introduced between the first conductor layer and the second conductor layer to act as a stress barrier. This intermediate layer prevents stress migration from occurring in the conductor layers while maintaining the optical functionality of the optical element.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The optical element uses a composite structure consisting of multiple layers including conductor layers and an intermediate layer with different material properties. This composite structure combines the optical functionality of conductor layers with the stress resistance of the intermediate layer.

Inventive Principle:
Principle #40Composite materials

2Reliability

If a stacked structure with intermediate layer is used, then stress migration is suppressed, but device complexity increases

Engineering Contradiction:
Improvestress migration resistanceVSAvoidstacked structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The conductor layer is segmented into a first conductor layer and a second conductor layer separated by an intermediate layer. This segmentation allows the intermediate layer to interrupt stress migration paths while maintaining the overall conductor functionality for optical operations.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The intermediate layer serves as a mediator between the first and second conductor layers, providing stress resistance without significantly complicating the device structure. The intermediate layer is integrated into the existing layered architecture of the optical element.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces stress migration in photodetection devices, enhancing the reliability and performance of optical elements by limiting metal movement and maintaining light transmission efficiency.

Implementation Method 1

a guided mode resonance (GMR) filter is an optical filter capable of transmitting only light in a narrow wavelength band (narrow band) by combining a diffraction grating and a clad-core structure

Methodology Applied
Scientific EffectDiffraction: Diffraction

Implementation Method 2

It utilizes the resonance between the guided mode generated in the waveguide and the diffracted light

Methodology Applied
Scientific EffectResonance: Resonance

Implementation Method 3

a semiconductor layer including a photoelectric conversion unit

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Data Source

PatentUS20240170515A1Photodetection device and electronic device
Publication Date: 2024.05.23 SONY SEMICON SOLUTIONS CORP
  • US20240170515A1 patent drawing
  • US20240170515A1 patent drawing
  • US20240170515A1 patent drawing

AI summary

An object of the present technology is to provide a photodetection device in which occurrence of stress migration is suppressed. A photodetection device includes: a semiconductor layer including a photoelectric conversion unit; an optical element that includes a base material and an opening array formed in the base material, supplies light selected by the opening array to the photoelectric conversion unit, and is arranged so as to overlap the photoelectric conversion unit in plan view, in which the base material has a stacked structure including a first conductor layer, an intermediate layer, and a second conductor layer in this order from the semiconductor layer side.