Photodetector Isolation Structure for Higher Photon Capture
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Solution Overview
Problem
Existing silicon photomultiplier (SiPM) devices face a reduction in photon detection efficiency due to the increasing working area occupied by deep trench isolation structures, which reduces the effective photosensitive area and leads to optical crosstalk between pixel units.
Innovation Solution
A photodetector design that includes a protruding portion on the top surface of the deep trench isolation structure, with a surface that protrudes relative to the substrate and a center higher than the edges, and a passivation layer with a refractive index greater than the protruding portion, allowing photons to be reflected into the photosensitive area and captured by the diode structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If deep trench isolation structures are used to prevent optical crosstalk between pixel units, then optical isolation between pixel units is improved, but the effective photosensitive area is reduced
Solution Approach 1:
The patent introduces a vertical dimension by forming a protruding portion that extends upward from the deep trench isolation structure. This three-dimensional structure creates an inclined reflective surface that redirects photons in the vertical and angular dimensions, allowing photons that would otherwise be lost to the isolation structure to be reflected back into the photosensitive area, thus recovering effective photosensitive area while maintaining optical isolation.
Solution Approach 2:
The patent converts the harmful effect of the deep trench isolation structure (which blocks and absorbs photons, reducing effective photosensitive area) into a beneficial effect by adding a protruding portion with an inclined surface that reflects photons back into the photosensitive area. The isolation structure that was previously a source of photon loss becomes a photon redirecting element that improves photon utilization.
2Reliability
If deep trench isolation structures are used to prevent optical crosstalk, then optical crosstalk between pixel units is reduced, but photon detection efficiency decreases
Solution Approach 1:
The protruding portion adds a vertical dimension to the isolation structure, creating an inclined reflective surface that redirects photons in three-dimensional space. This allows photons incident on the isolation structure to be reflected back into the photosensitive area at appropriate angles, increasing the number of photons detected by each pixel unit and improving photon detection efficiency while maintaining optical isolation.
Solution Approach 2:
The patent transforms the deep trench isolation structure from a harmful element that absorbs and blocks photons into a beneficial photon redirecting element. The protruding portion with its inclined surface causes photons that would otherwise be lost to the isolation structure to be reflected back into the photosensitive area, converting the isolation structure's photon-blocking function into a photon-redistributing function that enhances detection efficiency.
3Productivity
If the working area is increased to improve device performance, then more pixels can be added, but the proportion of area occupied by isolation structures increases, reducing effective photosensitive area
Solution Approach 1:
By introducing the vertical protruding portion with an inclined surface, the patent enables the isolation structure to perform a dual function: maintaining optical isolation between pixels while simultaneously reflecting photons back into the photosensitive area. This allows the device to scale with more pixels without proportionally increasing the area lost to isolation structures, as the protruding portions convert previously lost photons into useful detections.
Solution Approach 2:
The protruding portion on the deep trench isolation structure performs multiple functions: it maintains optical isolation between adjacent pixel units and simultaneously acts as a reflective element to redirect photons into the photosensitive area. This multi-functionality allows the isolation structure to contribute positively to photon detection rather than merely serving as a passive barrier, improving the ratio of effective photosensitive area to total device area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the photon detection efficiency by increasing the number of photons captured by each pixel unit, as the inclined surface of the protruding portion reflects incident photons into the photosensitive area, thereby improving the overall optical sensitivity and imaging information of the device.
Implementation Method 1
a refractive index of the passivation layer material being greater than a refractive index of a material of the protruding portions
Implementation Method 2
a refractive index of the passivation layer material being greater than a refractive index of a material of the protruding portions
Implementation Method 3
Upon absorbing incident photons, the SiPM triggers a photoelectric effect to detect the light signal
Data Source
AI summary
Photodetector and forming method thereof are provided. The photodetector includes a substrate including a plurality of photosensitive areas and isolation areas between adjacent photosensitive area; a diode structure in a photosensitive area of the plurality of photosensitive areas; a deep trench isolation structure in an isolation area of the isolation areas; a protruding portion at least on a top surface of the deep trench isolation structure, a surface of the protruding portion protruding relative to a surface of the substrate, and a center of the protruding portion being higher than edges of the protruding portion; and a passivation layer on surfaces of protruding portions, a refractive index of the passivation layer material being greater than a refractive index of a material of the protruding portions.


