Photodiode-HEMT-SAW Chip Structure Using Shared Schottky and Ohmic Contacts
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Solution Overview
Problem
The integration of photodiodes, high electron mobility transistors (HEMTs), and surface acoustic wave (SAW) devices on semiconductor chips faces challenges in reducing fabrication costs and increasing component integration while maintaining high speed and efficiency.
Innovation Solution
An integrated process and structure are developed, incorporating a photodiode, HEMT, and SAW device with specific semiconductor layers and electrodes, including Schottky and Ohmic contacts, to facilitate cost-effective integration on a chip.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If photodiodes, HEMTs and SAW devices are integrated on a single chip, then component integration is increased and fabrication cost is reduced, but device complexity and manufacturing process difficulty increase
Solution Approach 1:
The chip is divided into distinct functional regions: a photodiode region containing the photodiode structure, a transistor region containing the HEMT structure, and a SAW device region containing the surface acoustic wave device structure. Each region is independently structured but integrated on the same substrate, allowing separate optimization of each component while achieving overall integration
Solution Approach 2:
A common substrate and shared fabrication processes are used across all three device types (photodiode, HEMT, and SAW device), enabling multi-functional integration on a single chip. The unified approach allows simultaneous production of diverse components using standardized manufacturing techniques
2Manufacturing precision
If traditional separate fabrication methods are used for photodiodes, HEMTs and SAW devices, then manufacturing precision is maintained, but fabrication cost increases and productivity decreases
Solution Approach 1:
Multiple device fabrication processes are merged into a single integrated manufacturing flow. The method combines photodiode formation, HEMT fabrication, and SAW device creation into one continuous process sequence, allowing all three device types to be manufactured simultaneously on the same chip rather than through separate batch processes
3Speed
If chip size is reduced to increase integration, then electron movement distance is reduced and speed increases, but manufacturing precision requirements increase
Solution Approach 1:
Each device region is optimized with locally appropriate structures and dimensions. The photodiode region, transistor region, and SAW device region each have tailored geometries and material compositions suited to their specific functions, allowing compact design without compromising individual component performance or manufacturing feasibility
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces fabrication costs and enhances component integration, maintaining high speed and efficiency by utilizing a structured integration of photodiodes, HEMTs, and SAW devices on semiconductor chips.
Implementation Method 1
Photodiodes are light detectors that can convert light into current or voltage signals
Implementation Method 2
An HEMT is a kind of field effect transistor, which uses two materials with different energy gaps to form a heterojunction to provide a channel for carriers
Implementation Method 3
A surface acoustic wave filter (SAW Filter) can be widely used in various wireless communication systems
Data Source
AI summary
A structure with a photodiode, an HEMT and an SAW device includes a photodiode and an HEMT. The photodiode includes a first electrode and a second electrode. The first electrode contacts a P-type III-V semiconductor layer. The second electrode contacts an N-type III-V semiconductor layer. The HEMT includes a P-type gate disposed on an active layer. A gate electrode is disposed on the P-type gate. Two source/drain electrodes are respectively disposed at two sides of the P-type gate. Schottky contact is between the first electrode and the P-type III-V semiconductor layer, and between the gate electrode and the P-type gate. Ohmic contact is between the second electrode and the first N-type III-V semiconductor layer, and between one of the two source/drain electrodes and the active layer and between the other one of two source/drain electrodes and the active layer.