Photoelectric Sensor Electrode Integration for Simpler CMOS Layout
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Solution Overview
Problem
Current image sensors, particularly CMOS devices, require multiple film structures and exposure processes, leading to high costs and volume, due to the complex arrangement of electrodes and circuits.
Innovation Solution
The integration of the first drain electrode of the reset sub-circuit and the first electrode of the photoelectric converter into the same layer and connection as a single electrode simplifies the structure, reducing the number of film structures and exposure processes needed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the first drain electrode of the reset sub-circuit and the first electrode of the photoelectric converter are arranged in separate layers, then the circuit functionality is ensured, but the number of film structures and exposure processes increases, leading to higher cost and volume
Solution Approach 1:
The patent merges the first drain electrode of the reset sub-circuit and the first electrode of the photoelectric converter into the same layer, forming an integrated electrode structure. This consolidation reduces the number of separate film structures required and simplifies the exposure processes, directly addressing the contradiction between manufacturing ease and device complexity.
2Ease of manufacture
If multiple separate electrodes and film structures are used, then the circuit functionality is ensured, but the volume and cost of the photoelectric sensor increase
Solution Approach 1:
By combining multiple electrodes into a single integrated electrode structure in the same layer, the patent reduces the overall volume occupied by separate film structures and reduces manufacturing costs associated with multiple exposure processes.
Solution Approach 2:
The integrated electrode structure serves multiple functions: it acts as both the first drain electrode of the reset sub-circuit and the first electrode of the photoelectric converter. This multi-functionality eliminates the need for separate dedicated electrodes, thereby reducing volume and cost.
3Reliability
If the first electrode area is increased to prevent saturation, then the photoelectric conversion performance is improved, but the device volume increases
Solution Approach 1:
The patent utilizes the two-dimensional plane of a single layer more efficiently by optimizing the spatial arrangement and distribution of the integrated electrode structure. This allows for increased effective electrode area for photoelectric conversion without proportionally increasing the overall device volume, as the expansion occurs within the planar dimension rather than adding vertical layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration decreases the cost and volume of the photoelectric sensor while maintaining performance by allowing for a larger area of the first electrode and preventing saturation, thus enhancing design efficiency.
Implementation Method 1
a photoelectric converter, located on the base substrate, and the photoelectric converter comprises a first electrode and a photoelectric conversion layer
Data Source
AI summary
A photoelectric sensor, an image sensor and an electronic device are disclosed. The photoelectric sensor includes a base substrate, a driving circuit and a photoelectric converter, the driving circuit and the photoelectric converter are located on the base substrate; the photoelectric converter includes a first electrode and a photoelectric conversion layer, and the photoelectric conversion layer is located at a side of the first electrode away from the base substrate, the driving circuit includes a reset sub-circuit, the reset sub-circuit includes a first source electrode and a first drain electrode, the first electrode and the first drain electrode are integrated into a same electrode and arranged in a same layer as the first source electrode.