Photomask Connection Patterns for Dense Semiconductor Exposure
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Solution Overview
Problem
Existing methods for forming devices or chips larger than the maximum shot region of an exposure apparatus by dividing regions and individually exposing them face challenges in densely arranging patterns due to alignment errors, which require increased pattern width and spacing, making it difficult to prevent pattern peeling and short-circuiting between adjacent regions.
Innovation Solution
A photomask design with specific line patterns and connection patterns arranged in a way that the connection patterns have wider widths perpendicular to the line patterns, with strategically larger distances from virtual lines to their centers, allowing for closer spacing of adjacent patterns and minimizing the risk of pattern peeling and short-circuiting during the exposure process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the width of patterns is increased to ensure adequate spacing between adjacent patterns, then alignment errors are compensated and pattern peeling/short-circuiting is prevented, but the density of pattern arrangement decreases
Solution Approach 1:
The invention applies different width characteristics to different parts of the pattern structure. Connection patterns have larger widths in the second direction compared to line patterns, creating local quality differentiation. This allows adequate spacing and alignment compensation at connection regions while maintaining narrow line patterns for high density in other areas.
Solution Approach 2:
The pattern is segmented into functionally distinct components: line patterns for signal transmission and connection patterns for inter-region connectivity. This segmentation allows each component to be optimized independently - line patterns for density and connection patterns for reliability, resolving the contradiction between density and connection reliability.
2Reliability
If the interval between adjacent patterns is increased to prevent short-circuiting, then manufacturing defects are reduced, but the productivity and area utilization decrease
Solution Approach 1:
Adequate spacing is applied locally only at connection patterns where alignment errors occur, rather than uniformly across all patterns. This local quality approach prevents defects at critical connection points while maintaining tight spacing elsewhere, thereby preventing short-circuiting without sacrificing manufacturing efficiency.
3Manufacturing precision
If connection patterns are designed with larger widths perpendicular to line patterns, then alignment error tolerance is improved, but the area occupied by patterns increases
Solution Approach 1:
The connection patterns have larger widths in the second direction (perpendicular to line patterns) specifically at locations where alignment compensation is needed, while line patterns maintain smaller widths. This localized width increase provides alignment error tolerance only where necessary, minimizing the overall area occupied by patterns.
Solution Approach 2:
The pattern structure is divided into line patterns and connection patterns with different width characteristics. This segmentation allows the connection patterns to bear the area penalty for alignment tolerance while line patterns remain compact, optimizing the overall area utilization.
Data Source
AI summary
A photomask for exposing a region on a substrate, with a mask pattern, including a first line pattern, a second line pattern, a first connection pattern for a peripheral portion of the region and a second connection pattern for the peripheral portion, wherein the first connection pattern is wider than the first line pattern and the second connection pattern is wider than the second line pattern, a distance from a virtual line between the first line pattern and the second line pattern to a center line of the first connection pattern is larger than a distance from the virtual line to a center line of the first line pattern and a distance from the virtual line to a center line of the second connection pattern is larger than a distance from the virtual line to a center line of the second line pattern.