Photomask Multi-Region Patterning for Semiconductor Alignment
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Solution Overview
Problem
Existing patterning methods for semiconductor devices face limitations in resolution and misalignment issues due to the need for multiple exposure processes and photomask substitutions, which affect the accuracy and efficiency of pattern formation.
Innovation Solution
A method using a photomask with divided mask regions to sequentially transfer patterns onto a substrate, allowing for improved alignment and exposure efficiency by using a single photomask to form patterns in multiple regions, thereby reducing misalignment and increasing resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple photomasks are used for double patterning to reduce minimum pitch, then the minimum pitch can be reduced by half, but misalignments between masks occur
Solution Approach 1:
The patent combines multiple pattern regions (first region and second region) into a single photomask, creating a unified mask structure that transfers both patterns simultaneously. This merging eliminates the need for mask replacement and subsequent alignment operations, thereby resolving the misalignment issue while maintaining the reduced minimum pitch capability
Solution Approach 2:
The photomask is designed with multi-functional capability to define patterns in both the first region and second region of the substrate. By making the mask universal across multiple regions, the invention eliminates the need for multiple specialized masks, thereby preventing alignment errors while achieving fine pitch patterns
2Manufacturing precision
If multiple exposure processes are performed to form patterns in multiple regions, then fine patterns can be formed, but the process complexity and time increase
Solution Approach 1:
The patent merges multiple exposure operations into a single exposure process by incorporating multiple pattern regions into one photomask. This allows simultaneous transfer of patterns to both first and second regions, dramatically reducing the total exposure time while maintaining high pattern formation accuracy
Solution Approach 2:
The invention enables continuous pattern transfer across multiple regions in a single uninterrupted exposure process. By maintaining the exposure action continuously across the entire substrate area with the multi-region mask, the process eliminates idle time between exposures while preserving precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the resolution and reliability of pattern formation, allowing for more precise and efficient transfer of patterns onto semiconductor devices using a single photomask, improving alignment and reducing the need for multiple exposure processes.
Implementation Method 1
a first photosensitive layer pattern including a first pattern in the first region and a second pattern in the second region is formed by performing a first photolithography process using a photomask
Implementation Method 2
A first etching process is performed on the object layer using the first photosensitive layer pattern as an etching mask to form a first object layer pattern
Data Source
AI summary
The method of forming a pattern includes forming a first photosensitive layer pattern including a first pattern in a first region of a substrate and a second pattern in a second region of the substrate, by performing a first photolithography process using a photomask having a first mask region and a second mask region. The first pattern is transferred from the first mask region, and the second pattern is transferred from the second mask region. The method further includes forming a second photosensitive layer pattern including a third pattern in the second region of the substrate and a fourth pattern in the first region of the substrate, by performing a second photolithography process using the photomask. The third pattern is transferred from the first mask region, and the fourth pattern is transferred from the second mask region.