Photonic Conversion Device with Porous Conductor for IR-to-Visible Upconversion
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Solution Overview
Problem
Existing infrared (IR)-to-visible up-conversion devices have low external quantum efficiencies, typically less than 10% in converting IR photons to visible photons, limiting their application in pixelless imaging and other photonic conversion applications.
Innovation Solution
A photonic conversion device comprising a photoactive layer, a porous conductor layer, an electron transport layer, and a light emitting device, where bias voltages are applied to enhance electron injection and photon conversion, achieving a high photon-to-electron gain and subsequent visible light emission with efficiencies exceeding 1000%.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional IR photodetectors and up-conversion devices are used, then device structure is simple, but external quantum efficiency is low (less than 10%)
Solution Approach 1:
The patent combines a photodetector and a light emitting device into a single integrated photonic conversion device. The photodetector detects incident photons and generates electrical signals, which are then used to drive the light emitting device to produce output light, merging detection and emission functions into one device structure.
Solution Approach 2:
The integrated device performs multiple functions: it acts as both a photodetector for detecting incident photons and a light emitting device for generating output photons. This multi-functionality allows the device to achieve high external quantum efficiency by utilizing the electrical signals from photodetection to drive light emission, surpassing the limitations of conventional single-function devices.
2Productivity
If photonic conversion device is operated with bias voltages, then photon-to-electron gain increases, but energy consumption increases
Solution Approach 1:
The patent applies dynamic bias voltages to the photodetector and light emitting device during operation. The bias voltages are adjusted to optimize the photon-to-electron gain in the photodetector and the electron-to-photon conversion efficiency in the light emitting device, allowing the system to achieve high productivity while managing energy consumption through optimized voltage levels.
Solution Approach 2:
The patent changes operational parameters including bias voltage levels to optimize device performance. By carefully selecting and adjusting the bias voltages applied to the photodetector and light emitting device, the system achieves enhanced photon-to-electron gain while controlling energy consumption through parameter optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves a high photon-to-electron gain with fast dynamic response and efficient IR-to-visible photon conversion, surpassing the limitations of conventional up-conversion devices by utilizing capacitive gating and frequency translation, enabling applications in imaging and display technologies.
Implementation Method 1
a photoactive layer, a porous conductor layer
Implementation Method 2
a light emitting device in contact with the electron transport layer
Data Source
AI summary
A photonic conversion device is provided, comprising a photoactive layer, a dielectric layer, a porous conductor layer, and an electron transport layer in contact with the porous conductor layer. A light emitting device may be in contact with the electron transport layer, forming a conversion device with gain. A method of manufacturing a photonic conversion device may also be provided, comprising forming a photoactive layer, forming a dielectric layer over the photoactive layer, and depositing a conductor layer in contact with the dielectric layer, wherein one or more regions of the dielectric layer are masked during deposition such that the conductor layer includes a plurality of pores that extend through the conductor layer.