Solid-State Devices TRIZ Cases

Branched scan lines route initialization signals to minimize dead space, reducing bezel width and enhancing display efficiency.

Interrupting source and base diffusion strips exposes the N- drift region for Schottky contacts, reducing die area penalty without changing cell pitch.

Segmenting the photosensor surface into regions with distinct non-linearity correction factors improves energy resolution in multiplexed PET systems.

Concavo-convex structures on driver integrated circuits slow resin flow, preventing air bubbles in adhesive members during display assembly.

Dummy active regions buffer substrate areas to prevent dishing effects and edge damage, improving manufacturing yield.

Segmented etching with a sacrificial liner removes polysilicon stringers to maintain narrow threshold voltage distribution for reliable memory cells.

A light emitting device uses a metal primer layer to adjust chromaticity coordinates, resolving manufacturing precision challenges.

An ESD analysis device simulates circuit potentials across different power supply systems to extract border cells and calculate potential differences.

Conductive layer protects copper interconnects during sputtering.

A single patterning process forms gate insulating, active, and source-drain metal layers using a multi-tone mask.

A light guide plate entry surface engages sealing resin elements to accommodate linearly arranged light-emitting diodes.

Segmented nozzles and gas curtains replace shadow masks, delivering uniform organic films while eliminating material waste.

Varying metal layer thickness in a cavity structure radiates heat from the chip while preventing electrical shorts between layers.

A semiconductor gate structure uses self-assembly material sidewalls to lower dielectric constant and improve metal film coverage.

Segmented charge storage regions in 3D NAND flash improve read characteristics by preventing unwanted charge accumulation through independent voltage control.

Offset-stacked semiconductor chips expose edge pads via vertical interconnectors, resolving pad accessibility issues in compact packages.

Imprinting creates recesses in a substrate layer for polar molecule redistribution into conductive grids.

An organic protective layer prevents oxygen and water permeation through photoresist, maintaining electrical performance in bending regions.

A sensor controller switches driving modes to measure capacitance variations between electrodes for body composition analysis.

A color filter uses a coloring agent absorbing 420 nm to 470 nm blue light to resolve spectrum mismatch and maintain color reproducibility.

A magnetic memory element uses a dielectric wall and conductive program line to apply gate voltage for dynamic anisotropy control.

Selective deposition and etching of augmentation material adjusts spacer dimensions, resolving non-uniform feature alignment caused by fixed spacing.

Filling particles with smaller sizes and aspect ratios disperse among wavelength conversion particles to improve adhesion.

Groove structures in OLED packaging layers enhance mechanical interlocking between inorganic and organic films, preventing peeling under bending stress.

A display device uses segmented opposite electrodes to cover pixel units while leaving transmissive areas uncovered.

A photoelectric conversion element uses a 4H-pyran compound in its organic layer to enhance exciton dissociation and charge transfer efficiency.

Hole injection erasure lowers initial voltage thresholds in virtual ground array memory cells.

Spacers offset bit line implants to block hot electron transport and prevent program disturb while maintaining device scalability.

Annealing organic layers induces phase separation to form a bulk heterojunction, enhancing exciton diffusion and dissociation efficiency.

A metal wire extends between pixels to uniformize upper electrode potential without reducing the light emission area.

Overlapping visible and infrared photosensors enable concurrent two-dimensional and three-dimensional imaging within a single pixel architecture.

Lateral light propagation through a waveguide layer increases the emission angle and improves brightness uniformity in surface light source modules.

A three-dimensional semiconductor memory device stacks nonvolatile cell sub-strings vertically to reduce horizontal area occupation.

Incorporating difluorothienothiophene units lowers HOMO energy levels, elevating open circuit voltage while maintaining solution processability.

A second substrate with a protruding portion positions the touch sensor and polarizing plate on an extended area.

A high resistance short circuit preventing layer separates electrodes in organic light emitting devices to block charge carrier flow.

Segmented host-dopant layers in a tandem structure prevent roll-off and extend device lifetime.

Segmented first metal layers bridge gate pads and upper conductors, reducing step height to prevent disconnections during conformal deposition.

A FinFET fabrication method forms gate dielectric structures with different thicknesses on the same semiconductor substrate.

Selective insulative growth creates covered void-spaces between adjacent digitlines in vertically-stacked memory arrays.

Alternating expanded and non-expanded sealant segments prevent voltage transmission electrode oxidation while maintaining strong adhesion.

Cell over periphery memory stacks input-output pads on the substrate bottom, resolving interface connectivity limits that restrict vertical integration density.

A single driving transistor time-divides red, green, and blue light emission to simplify pixel circuit wiring.

Orienting SGT pillar sidewalls on specific crystal planes optimizes carrier mobility in semiconductor structures.

Plasma etching uses gate electrode layer as intermediary to form window openings without damaging the underlying semiconductor surface.

A configurable computing array uses programmable memory to store look-up tables for complex math functions, enabling efficient hardware computation.

Tetradentate platinum complexes tune emission color via carbene substituents, resolving stability trade-offs in OLED fabrication.

A segmented electromagnetic plate system transfers light emitting elements between platforms using controlled magnetic attraction.

A compressive stress film forms on the amplifying transistor channel to manage local tensile forces in solid-state image pickup devices.

A window sensing portion integrates conductive layers with a light shielding member to detect touch inputs.

A semiconductor memory pillar uses a grain size gradient between cap and channel layers to reduce contact resistance.

A white subpixel first electrode spaced apart from an underlying wire reduces short-circuit risks in organic light emitting displays.

Oxide barrier prevents wet etchant infiltration into dummy regions, eliminating short circuits during contact formation.

Replacing silicon nitride with aluminum nitride in the dielectric layer achieves 190 V withstand capability without enlarging the chip area.

Double control gates stabilize floating gate voltage via tri-state buffers to eliminate dedicated select transistors.

Applying negative voltage to the p-well reduces peak positive voltage requirements, minimizing high voltage generation circuitry area and power consumption.

Continuous organic layer deposition on large substrates eliminates fine metal mask alignment requirements.

Nesting a convex lens within a case through area reduces optical path length and package height while improving light extraction efficiency.

A pixel arrangement structure shares green sub-pixels between adjacent units to reduce fine metal mask tension during manufacturing.

Varying bank thickness prevents overflow and air bubbles, improving manufacturing precision.

A dummy light-emitting layer and sealant structure define a peripheral emission zone to resolve non-uniform drying rates between central and edge regions.

A photonic conversion device integrates a porous conductor layer and electron transport structure to drive light emission from incident photons.

Voltage-controlled entry into cavities prevents agglomeration, enhancing light utilization and service life.

A semiconductor fabrication method uses capping patterns to define contact hole depths for uniform planarization.

Segmented absorber regions and pyramidal structures reduce dark current, enabling higher operating temperatures without cryogenic cooling.

Segmented contact element with transparent intermediate and metallic mirror layers improves pixel brightness.

A FinFET device with a local buried oxide region reduces leakage current while embedded source and drain structures induce mechanical stress.

In-situ crosslinked polymer passivates perovskite crystal grain boundaries, preventing ion migration and enhancing hydrothermal stability.

A tandem organic light-emitting element uses a thermally activated delayed fluorescent layer to transfer energy from a triplet-triplet fusion host.

Amorphous carbon multilayer electrodes provide electrical conduction and optical reflection in organic light-emitting diodes.

Molybdenum oxide oxidation reduces interface stress, preventing interlayer dielectric delamination in OLED thin film transistors.

Differentiating switching and driving transistor structures in OLED pixels using polycrystalline silicon layers to enhance emission efficiency.

Silane self-assembled monolayers improve charge transport and on/off ratios, reducing fabrication complexity for flexible electronics.

A photolithography mask uses supplementary patterns to achieve high-resolution exposure of fine contact holes.

Integrating edge-mounted contacts on a single substrate eliminates wirebonding steps, reducing package size and manufacturing costs.

Resin curing forms integrated electrodes, simplifying manufacturing complexity while maintaining reliable electrical connections.

A connecting member with magnetic bodies and elastic pin-type terminals supplies power to an OLED display.

Segmenting isolation layers into distinct depths resolves insufficient light guidance and conversion efficiency in conventional sensors.

Fuse wires electrically couple signal lines and burn the light emitting layer to segment current paths, preventing light leakage between adjacent sub-pixels.

Vertical mold walls constrain die position to eliminate alignment variability and reduce package thickness.

Adhering a pre-formed lens to the sensor encapsulant minimizes voids and reduces offset tolerances below 20 μm.

Carbon electrodes shield phase change material from oxygen diffusion, preventing degradation and ensuring PCM cell reliability.

Integrating a light-shielding function into the spacer layer eliminates metal charge accumulation and reduces manufacturing costs.

Local quality differentiation of the overcoat layer reduces current density in blue and white sub-pixels, extending panel lifespan by 2.04 times.

Sensitized semiconductor diodes integrate optically sensitive nanocrystals with pixel circuits, reducing crosstalk and noise while improving sensitivity.

Amorphous carbon sacrificial layer enables selective dry etching to form capacitance contact plugs in semiconductor devices.

Segmented side-chains with opto-electronic functional groups reduce driving voltage and extend lifetime in polymer light-emitting diodes.

Low temperature polycrystalline silicon thin films form p-type and n-type thin film transistors alongside horizontal photo diodes in a single layer.

Angled sidewalls on a growth substrate redirect light toward the top surface, eliminating substrate removal steps and simplifying manufacturing processes.

Self-aligned patterning eliminates extra masks to boost capacitance per unit area.

Alternating hole injection and transport layers lower driving voltage by reducing interfacial barriers for efficient charge transfer.

A PN junction layer suppresses self-doping during cathode vapor deposition to balance carrier injection and extend OLED lifetime.

A magnetoresistive sensor detects magnetic field changes from an asymmetric magnet mounted on a valve shaft.

Uniform vertical hole spacing and distinct channel support structures remedy etching defects to enhance manufacturing efficiency and device reliability.

A segmented passivation layer enables selective etching to remove residual sand from display substrates.

A proximity sensor package integrates a baffle optical isolator between the radiation source and detector to block internal signal propagation.

A resistance change memory controller sets erasure flags to maintain cell data states during block operations.

A polymer dispersed liquid crystal layer modulates light transmission via electric fields to manage external visibility in transparent organic light emitting displays.

Organic films avoid outermost dams in non-display areas, preventing sensing line short circuits and improving OLED reliability.

Intermediate resin layers match refractive indices between silicon nitride sealing films and adjacent structures, reducing interface reflection losses.