3D Photonic-Electrical Package Bonding Without TSVs or Wire Bonds
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Solution Overview
Problem
Existing semiconductor technologies face challenges in efficiently integrating optical and electrical devices due to high interference and the need for costly through-silicon vias and wire-bond connections, which hinder efficient light coupling and high-frequency signal transmission.
Innovation Solution
A 3D package integration of photonic and electrical devices using index matching materials on the backside of optical devices for improved light coupling, eliminating the need for through-silicon vias and wire-bond connections, and incorporating metal reflectors to enhance light interference, allowing direct high-frequency signal transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If through-silicon via and wire-bond connections are used for integrating optical and electrical devices, then electrical connectivity is achieved, but parasitic interference increases and manufacturing cost increases
Solution Approach 1:
The patent extracts and eliminates the harmful through-silicon via and wire-bond connection structures from the integration process. By removing these traditional interconnection methods, the patent eliminates the parasitic interference and inductance they introduce, while maintaining electrical connectivity through alternative direct bonding approaches between photonic and electronic devices
Solution Approach 2:
The patent introduces an intermediary substrate or carrier that enables direct bonding between photonic and electronic devices without requiring through-silicon vias or wire bonds. This intermediary structure facilitates electrical connectivity while minimizing parasitic effects by providing a low-inductance path for signal transmission
2Ease of manufacture
If through-silicon via connections are used, then electrical devices can be connected, but manufacturing cost increases and area is consumed
Solution Approach 1:
The patent removes the complex through-silicon via formation process from the manufacturing sequence. By eliminating the need to drill, etch, and fill deep vias through the silicon substrate, the patent significantly simplifies the manufacturing process while maintaining device integration capability
Solution Approach 2:
The patent transitions from vertical through-silicon via connections to a different dimensional approach, using surface-level or near-surface bonding interfaces. This dimensional change allows electrical connectivity to be achieved without penetrating through the entire silicon thickness, thereby simplifying manufacturing
3Ease of manufacture
If wire-bond connections are used for light coupling, then optical devices can be connected, but light coupling efficiency decreases and manufacturing cost increases
Solution Approach 1:
The patent extracts and eliminates wire-bond connections from the optical coupling path. By removing this indirect mechanical coupling method, the patent enables direct optical coupling between photonic devices, thereby restoring light coupling efficiency while maintaining manufacturing feasibility
Solution Approach 2:
The patent replaces the mechanical wire-bond coupling system with a direct optical coupling mechanism. This substitution eliminates the mechanical constraints and inefficiencies of wire bonding, allowing light to couple directly between optical components with high efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances light coupling efficiency, reduces parasitic interference, and enables high-frequency signal transmission up to 250 Gbps per channel without the need for costly processes, freeing up area for additional electrical devices.
Implementation Method 1
index matching materials on the backside of optical devices for improved light coupling
Implementation Method 2
incorporating metal reflectors to enhance light interference
Implementation Method 3
incorporating metal reflectors to enhance light interference
Data Source
AI summary
A method for making semiconductor packages may comprise: forming a photonic die; forming an electrical die; and bonding the photonic die to the electrical die. Forming the photonic die may comprise: forming a grating coupler over a first silicon substrate; forming a plurality of first interconnect structures over the grating coupler; and forming an index matching material extending from a backside surface of the first silicon substrate to the oxide layer. Forming the electrical die may comprise: forming a plurality of transistors over a frontside surface of a second silicon substrate; and forming a plurality of second interconnect structures over the transistors. At least some of the first interconnect structures can be electrically connected to some of the second interconnect structures.