Photonic Semiconductor Device Singulation With Edge Coupler Protection

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Solution Overview

Problem

Existing photonic packages face challenges in reducing damage to sidewalls adjacent edge couplers during singulation and improving optical coupling efficiency, while maintaining a compact form factor.

Innovation Solution

The use of sacrificial protective layers and precise etching techniques, such as dry anisotropic etching, to form smooth sidewalls and reduce the risk of damage during singulation, combined with the integration of edge couplers for efficient optical coupling.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional singulation processes are used, then manufacturing efficiency is maintained, but sidewall damage occurs during singulation

Engineering Contradiction:

Improvesidewall integrityVSAvoidsingulation process complexity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

A protective layer is deposited on the sidewalls before the singulation process to prevent damage during cutting. This preliminary protective action ensures sidewall integrity is maintained throughout manufacturing without requiring complex post-processing or specialized singulation equipment.

Inventive Principle:

Principle #10Preliminary action

2Reliability

If sidewall protection is implemented, then optical coupling efficiency improves, but device height increases

Engineering Contradiction:

Improveoptical coupling efficiencyVSAvoiddevice height

Core Design Contradiction:

ReliabilityVSLength of stationary object

Solution Approach 1:

The protective layer is designed with specific material properties and thickness parameters optimized for optical coupling while maintaining a compact form factor. By carefully controlling the layer's refractive index and thickness, effective optical coupling is achieved without excessive height increase.

Inventive Principle:

Principle #35Parameter changes

3Manufacturing precision

If precise etching techniques are used, then sidewall smoothness is improved, but manufacturing complexity increases

Engineering Contradiction:

Improvesidewall smoothnessVSAvoidetching process complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

Conventional mechanical etching methods are replaced with dry anisotropic etching techniques that provide better sidewall control and smoothness. This substitution enables precise sidewall formation with reduced mechanical contact, improving precision while managing manufacturing complexity through process integration.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach minimizes sidewall damage during singulation, enhances optical coupling efficiency, and allows for a reduced height of the photonic system, improving performance and reliability.

Implementation Method 1

performing a dry anisotropic etching process on the photonic package to form a smooth sidewall adjacent the edge coupler

Methodology Applied

Scientific EffectDry anisotropic etching:

Data Source

PatentUS20250334755A1Photonic semiconductor device and method of manufacture

Publication Date: 2025.10.30 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A method includes connecting a photonic package to a substrate, wherein the photonic package includes a waveguide and an edge coupler that is optically coupled to the waveguide; connecting a semiconductor device to the substrate adjacent the photonic package; depositing a first protection material on a first sidewall of the photonic package that is adjacent the edge coupler; encapsulating the photonic package and the semiconductor device with an encapsulant; performing a first sawing process through the encapsulant and the substrate, wherein the first sawing process exposes the first protection material; and removing the first protection material to expose the first sidewall of the photonic package.