Metal-Containing Photoresist Developer for Low Line Edge Roughness

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Solution Overview

Problem

Chemically amplified photoresists exhibit low sensitivity under extreme ultraviolet exposure and increased line edge roughness at smaller feature sizes, necessitating improved etching resistance, sensitivity, and critical dimension uniformity in photolithography processes.

Innovation Solution

A developer composition for metal-containing photoresists with controlled hydrogen bonding interactions between metal oxides, organic solvents, and additives, optimized through molecular dynamics simulation, to minimize solubility in exposed regions and enhance pattern fidelity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If chemically amplified photoresist is used for high sensitivity, then sensitivity is improved, but line edge roughness increases at smaller feature sizes

Engineering Contradiction:

ImprovesensitivityVSAvoidline edge roughness

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent changes the chemical parameters of the photoresist system by introducing metal-containing compounds (such as tin, zinc, or calcium carboxylates) and matching them with specific developer compositions. This parameter change enables improved etching resistance and reduced line edge roughness while maintaining high sensitivity, as the metal compounds modify the chemical amplification process and reduce acid-catalyzed degradation at line edges.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs composite photoresist materials that combine organic polymers with inorganic metal compounds. This composite approach creates a synergistic effect where the metal-containing photoresist provides enhanced etching resistance and reduced line edge roughness, while the organic component maintains sensitivity and processability. The composite nature allows simultaneous optimization of multiple performance parameters.

Inventive Principle:

Principle #40Composite materials

2Ease of manufacture

If conventional photoresist composition is used, then ease of manufacture is maintained, but etching resistance is insufficient

Engineering Contradiction:

ImprovemanufacturabilityVSAvoidetching resistance

Core Design Contradiction:

Ease of manufactureVSStrength

Solution Approach 1:

The patent modifies the compositional parameters of the photoresist by incorporating metal carboxylate compounds (such as tin, zinc, or calcium salts) at controlled concentrations. These parameter changes enhance etching resistance without significantly complicating the manufacturing process, as the metal compounds can be integrated into existing photoresist formulation workflows and applied using standard coating and baking procedures.

Inventive Principle:

Principle #35Parameter changes

3Productivity

If photoresist solubility is increased for better development, then development speed is improved, but pattern collapse occurs in exposed portions

Engineering Contradiction:

Improvedevelopment speedVSAvoidpattern collapse

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent changes the solubility parameters by introducing metal oxide clusters and controlling the chemical composition to achieve optimal dissolution behavior. The metal-containing photoresist exhibits controlled solubility that enables adequate development speed while preventing pattern collapse through enhanced structural stability provided by the metal-oxygen-metal bonding network.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The developer composition achieves high-resolution pattern formation with reduced line edge roughness and consistent critical dimensions, supporting advanced lithography processes like EUV and e-beam lithography for next-generation semiconductor devices.

Implementation Method 1

a ratio of the number of hydrogen bonds between the metal oxide containing the metal-oxygen-metal bond and the organic solvent to the number of hydrogen bonds between the metal oxide containing the metal-oxygen-metal bond and the additive is greater than 0 and less than or equal to 4.5

Methodology Applied

Scientific EffectHydrogen bonding:

Implementation Method 2

the number of hydrogen bonds is calculated by counting each frame after molecular dynamics simulation and taking an average value of the each frame

Methodology Applied

Scientific EffectMolecular dynamics simulation:

Data Source

PatentUS20260064911A1Developer composition for metal-containing photoresist, and method of forming patterns including developing step using the composition

Publication Date: 2026.03.05 SAMSUNG SDI CO LTD

AI summary

A developer composition for a metal-containing photoresist and a method of forming patterns including a developing step (e.g., act or task) utilizing the developer composition are disclosed. The developer composition for a metal-containing photoresist may be applied to a metal-containing photoresist having an exposed portion and an unexposed portion and include an organic solvent and an additive, wherein the exposed portion includes a metal oxide including a metal-oxygen-metal bond, and a metal oxide is substituted with a hydroxyl group at the terminal end, in an exposed portion, a ratio of the number of hydrogen bonds between the metal oxide including the metal-oxygen-metal bond and the organic solvent to the number of hydrogen bonds between the metal oxide including the metal-oxygen-metal bond and the additive is greater than 0 and less than or equal to about 4.5.