Thinner Composition for Photoresist EBR and Hump Height Control
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Solution Overview
Problem
Existing thinner compositions for semiconductor manufacturing fail to provide excellent solubility for various photoresist films and spin-on hardmasks, leading to high hump heights and non-uniform coating films, which result in defects and reduced yield.
Innovation Solution
A thinner composition comprising an organic solvent with a Hansen solubility parameter by hydrogen bonding force (δh) value of 10 or more, combined with a hydroxyalkylketone compound, balances solubility and film uniformity, reducing hump heights and improving edge bead removal and resist reduced coating properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high polarity components are added to improve solubility and EBR properties, then solubility and edge bead removal improve, but photoresist swelling increases causing higher hump heights
Solution Approach 1:
The patent changes the chemical composition parameters of the thinner by incorporating specific esters (methyl 2-hydroxyisobutyrate, propylene glycol methyl ether acetate) and carboxylic acids (methoxypropanolacetic acid) with controlled polarity. This balanced composition achieves effective EBR while controlling photoresist swelling to reduce hump heights, resolving the contradiction between solubility improvement and hump height control.
2Adaptability or versatility
If high polarity components are added to improve solubility for various photoresist films and SOHs, then solubility improves, but coating film uniformity deteriorates due to increased hump heights
Solution Approach 1:
The patent creates a composite thinner formulation combining multiple esters, carboxylic acids, and alcohols with complementary properties. This composite composition provides broad solubility for various photoresist films and spin-on hardmasks while maintaining coating film uniformity through balanced polarity and controlled swelling effects.
3Ease of manufacture
If conventional thinner compositions are used, then manufacturing simplicity is maintained, but EBR and RRC properties are insufficient leading to defects
Solution Approach 1:
The patent modifies the thinner composition parameters by incorporating specific ratios of esters (1-35 wt%), carboxylic acids (0.01-5 wt%), and alcohols (60-98 wt%). This optimized parameter set achieves excellent EBR and RRC properties for semiconductor manufacturing while maintaining practical manufacturability through use of commercially available components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves improved solubility for diverse photoresist films and spin-on hardmasks, reducing hump heights and enhancing coating film uniformity, thereby increasing the usable area and reducing defects in semiconductor processes.
Implementation Method 1
an organic solvent with a Hansen solubility parameter by hydrogen bonding force (δh) value of 10 or more
Implementation Method 2
it may accelerate the swelling of the photoresist from the EBR end toward the center of the wafer, resulting in a higher hump height
Data Source
AI summary
A thinner composition containing an organic solvent with a Hansen solubility parameter by hydrogen bonding force (δh) value of 10 or more and a hydroxyalkylketone compound are disclosed. The thinner composition has improved EBR and RRC properties due to excellent solubility for photoresist films and spin-on hardmasks (SOHs). The thinner composition can reduce hump heights and improve coating film uniformity.