Organic Photoresist Planarization for Light-Emitting Devices

The patent applies preliminary action by performing half-exposure and development on the organic photoresist layer before final curing. This removes a specific thickness of the photoresist layer in the protruding region beforehand, compensating for the anticipated shrinkage that will occur during subsequent drying and curing processes. The thickness removal is calculated based on the protruding height and curing shrinkage rate, ensuring that after shrinkage, the film surface becomes uniform.

The patent changes physical parameters of the photoresist layer by controlling the exposure dose to achieve half-exposure, which selectively removes material to a precise thickness. The exposure energy and development conditions are optimized to remove exactly the thickness needed to compensate for future shrinkage, transforming the film thickness parameter to achieve uniformity after curing.

The patent performs preliminary thickness adjustment on the photoresist layer through half-exposure and development before the anode deposition. By removing a calculated thickness from the protruding region in advance, the underlying substrate surface is pre-flattened, ensuring that when the anode is subsequently deposited, it forms a uniform layer without thickness variations that would cause nonuniform light emission.

The patent applies preliminary anti-action by removing material from the protruding region before anode deposition to counteract the potential nonuniformity that would arise from depositing on an uneven surface. This preemptive material removal creates a compensated surface that prevents the formation of thickness variations in the anode layer, thereby maintaining light emission uniformity while keeping the device structure simple.