Photosensitive Transistor Layout for Higher Sensitivity and Stability
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Solution Overview
Problem
Photosensitive transistors in existing technologies suffer from poor stability and reduced sensitivity due to uneven structures and a small photosensitive area, leading to insufficient photogenerated carriers and reduced photoelectric gain.
Innovation Solution
A photosensitive transistor design featuring a substrate with a first semiconductor layer, a first gate, first and second electrodes, and a second semiconductor layer, where the second semiconductor layer has a main body portion and auxiliary portions, ensuring uniform channel structures and increased photocurrent generation, thereby enhancing sensitivity and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the photosensitive layer area is increased to generate more photogenerated carriers, then the photoelectric gain and sensitivity are improved, but the structural uniformity deteriorates leading to poor stability
Solution Approach 1:
The photosensitive transistor is divided into a main region and multiple opening regions. The second semiconductor layer is selectively formed in the main region and partially in the opening regions, creating segmented photoelectric conversion zones. This segmentation allows the photosensitive area to be increased through opening regions while maintaining structural uniformity in the main region, thus improving sensitivity without compromising stability.
Solution Approach 2:
Different regions of the photosensitive transistor are given different functions: the main region maintains uniform channel structure for stability, while the opening regions provide additional photoelectric conversion area for sensitivity. The second semiconductor layer is selectively placed in specific regions rather than uniformly across the entire device, optimizing both sensitivity and stability through localized functional differentiation.
2Quantity of substance
If the photosensitive layer area is increased to improve sensitivity, then more photogenerated carriers are generated, but the device complexity increases
Solution Approach 1:
The device is segmented into main region and opening regions with the second semiconductor layer selectively formed accordingly. This segmentation strategy increases the photosensitive area without requiring complete restructuring of the entire device, thereby improving sensitivity while controlling the increase in device complexity through targeted modifications.
3Stability of the object's composition
If a uniform channel structure is maintained to ensure stability, then the photosensitive area is limited, reducing photoelectric gain
Solution Approach 1:
The channel structure is segmented into a main region with uniform structure for stability and opening regions that can accommodate additional second semiconductor layer for enhanced photoelectric gain. This segmentation allows the uniform channel structure to be maintained where needed while expanding the photosensitive area in specific zones to improve overall photoelectric performance.
Solution Approach 2:
The photosensitive area is expanded by utilizing the opening regions in the planar dimension, rather than increasing the vertical thickness of the channel structure. This dimensional approach allows increased photoelectric gain through area expansion while preserving the uniform channel structure in the vertical dimension, thus maintaining stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves photoelectric detection sensitivity by generating a large photocurrent and maintains structural uniformity, ensuring efficient current transmission and stability of the photosensitive transistor.
Implementation Method 1
the area covered by the photosensitive layer is relatively small, so that certain positions of the photosensitive transistor generate less photogenerated carriers under illumination
Implementation Method 2
the first gate is insulated from and overlaps the channel region... the channel region is located between the first doped region and the second doped region
Data Source
AI summary
A photosensitive transistor includes a substrate and a first semiconductor layer, a first gate, a first electrode, a second electrode and a second semiconductor layer which are located on a side of the substrate. The first semiconductor layer includes a first doped region, a second doped region and a channel region, the second semiconductor layer is in direct contact with the channel region, and an area of the second semiconductor layer is less than an area of the first semiconductor layer. The photosensitive transistor includes a main region and opening regions, and the opening regions are located at a periphery of the main region. The first electrode and the second electrode are in the same layer and insulated from each other and both surround the main region. The second semiconductor layer includes a main body portion located in the main region and auxiliary portions located in the opening regions.