Piezoelectric Layer Transfer Using UV-Cured Adhesive Bonding

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Solution Overview

Problem

Existing methods for producing donor substrates for piezoelectric layer transfer in radiofrequency devices face issues such as high costs, mechanical weakness, and curvature due to oxide layer deposition and thermal expansion coefficient differences, leading to deformation and low bonding energy.

Innovation Solution

A process involving a photopolymerizable adhesive layer deposited on a handle substrate, bonded to a piezoelectric substrate, and polymerized using UV light to form a donor substrate with improved mechanical strength and reduced curvature, allowing for transfer at lower temperatures and minimizing thermal deformation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If oxide layers are deposited on piezoelectric and carrier substrates for bonding, then adhesion between substrates is improved, but manufacturing cost and process time increase

Engineering Contradiction:
ImproveadhesionVSAvoidmanufacturing cost
Core Design Contradiction:
StrengthVSEase of manufacture

Solution Approach 1:

The invention changes the bonding mechanism from oxide-layer-based thermal bonding to direct bonding at reduced temperatures (below 200°C), eliminating the need for expensive oxide deposition processes while maintaining strong adhesion between piezoelectric and carrier substrates

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention extracts and eliminates the oxide layer deposition step from the bonding process, using direct substrate bonding instead, which reduces manufacturing complexity and cost while achieving sufficient adhesion strength

Inventive Principle:
Principle #2Taking out (Extraction)

2Strength

If consolidating anneal is performed at high temperature to strengthen oxide bonding, then bonding strength is improved, but substrate deformation increases due to thermal expansion differences

Engineering Contradiction:
Improvebonding strengthVSAvoidsubstrate deformation
Core Design Contradiction:
StrengthVSShape

Solution Approach 1:

The invention changes the bonding temperature parameter from high temperature (requiring annealing) to low temperature (below 200°C), eliminating thermal expansion mismatches that cause substrate deformation while achieving adequate bonding strength through the modified bonding process

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If photopolymerizable adhesive layer is used instead of oxide layers, then manufacturing cost and process time are reduced, but bonding strength may be compromised

Engineering Contradiction:
Improvemanufacturing costVSAvoidbonding strength
Core Design Contradiction:
Ease of manufactureVSStrength

Solution Approach 1:

The invention uses photopolymerizable adhesive layers that cure at low temperatures, providing sufficient bonding strength for thin piezoelectric layers while eliminating expensive oxide deposition processes and reducing overall manufacturing cost

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The photopolymerizable adhesive layer serves as an intermediary bonding agent between piezoelectric and carrier substrates, providing adequate adhesion strength without requiring expensive oxide layers or high-temperature processing

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The process results in a cost-effective, mechanically strong donor substrate that reduces curvature and deformation, enabling efficient transfer of piezoelectric layers with enhanced bonding energy and stability.

Implementation Method 1

irradiating the heterostructure with a light flux in order to polymerize the adhesive layer

Methodology Applied
Scientific EffectPhotopolymerization: Photopolymerisation

Data Source

PatentUS12167694B2Method for transferring a piezoelectric layer onto a support substrate
Publication Date: 2024.12.10 SOITEC SA
  • US12167694B2 patent drawing
  • US12167694B2 patent drawing
  • US12167694B2 patent drawing

AI summary

A method for transferring a piezoelectric layer onto a support substrate comprises: —providing a donor substrate including a heterostructure comprising a piezoelectric substrate bonded to a handling substrate, and a polymerized adhesive layer at the interface between the piezoelectric substrate and the handling substrate, —forming a weakened zone in the piezoelectric substrate, so as to delimit the piezoelectric layer to be transferred, —providing the support substrate, —forming a dielectric layer on a main face of the support substrate and/or of the piezoelectric substrate, —bonding the donor substrate to the support substrate, the dielectric layer being at the bonding interface, and—fracturing and separating the donor substrate along the weakened zone at a temperature below or equal to 300° C.