Piezoelectronic Transistor Coplanar Electrodes Bulk Material Fabrication
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Solution Overview
Problem
Existing piezoelectronic transistors face challenges in fabrication and switching speed due to the requirement of thin films and vertical electric fields, making it difficult to scale and simplify the process while maintaining performance.
Innovation Solution
A piezoelectronic transistor design featuring a coplanar arrangement of electrodes on a piezoelectric element with a trench, allowing for a multi-directional electric field that induces vertical displacement, enabling the use of bulk material and simplifying fabrication by selecting the portion of the piezoelectric element that participates in the displacement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a vertical electric field configuration is used in existing piezoelectronic transistors, then the switching function is achieved, but the fabrication complexity increases and scaling becomes difficult
Solution Approach 1:
The patent inverts the conventional vertical electric field configuration by using coplanar electrodes that generate a multi-directional electric field. Instead of applying voltage vertically through stacked electrodes, the invention applies voltage horizontally through coplanar electrodes, causing the piezoelectric element to expand/contract vertically due to the multi-directional field effect. This inversion simplifies fabrication while maintaining switching function.
Solution Approach 2:
The patent transitions from a one-dimensional vertical field configuration to a two-dimensional multi-directional field configuration using coplanar electrodes. The electric field now has both horizontal and vertical components, creating a multi-directional field that induces vertical displacement of the piezoelectric element. This dimensional change enables simplified coplanar electrode fabrication while achieving the desired vertical switching action.
2Ease of manufacture
If thin films are used in existing piezoelectronic transistors, then vertical electric fields can be applied, but the fabrication process becomes more difficult and scaling is limited
Solution Approach 1:
The patent inverts the material requirement from thin films to bulk materials. By using coplanar electrodes to generate a multi-directional electric field, the invention can utilize bulk piezoelectric materials instead of requiring precise thin film deposition. The multi-directional field effectively couples with the bulk material to produce the necessary vertical displacement, eliminating the need for complex thin film fabrication processes.
3Ease of manufacture
If coplanar electrodes with multi-directional electric field are used, then fabrication is simplified and bulk materials can be used, but the electric field configuration becomes more complex
Solution Approach 1:
The coplanar electrode configuration serves multiple functions simultaneously: it generates the electric field, defines the active region through the trench structure, and enables both horizontal field application and vertical displacement. The multi-directional electric field configuration is inherently built into the coplanar geometry, eliminating the need for separate vertical electrode structures and simplifying the overall device architecture.
4Speed
If the entire piezoelectric element is used for displacement, then switching amplitude is maximized, but switching speed decreases
Solution Approach 1:
The patent segments the piezoelectric element into an active region and a non-active region using a trench structure. The coplanar electrodes are positioned to apply the electric field specifically to the active region, which is a portion of the bulk piezoelectric material. This segmentation allows the active region to be optimized for fast switching while the overall structure maintains sufficient displacement amplitude through proper dimensional design of the active region.
Solution Approach 2:
The patent applies different properties to different regions of the piezoelectric element. The active region has optimized dimensions and material properties for fast response to the multi-directional electric field, while the non-active region provides structural support and can be designed with different properties. This local optimization enables both fast switching speed and adequate switching amplitude.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design simplifies the fabrication process, allows for the use of bulk materials, and adjusts switching speed by controlling the trench dimensions, resulting in efficient resistance modulation and switching performance.
Implementation Method 1
A piezoelectronic transistor (PET) is based on a piezoelectric (PE) element modulating the resistance of a piezoresistive (PR) element. That is, applying voltage to a PE changes the shape of the PE which affects the electrical resistance of a PR element closely coupled with the PE.
Implementation Method 2
A piezoelectronic transistor (PET) is based on a piezoelectric (PE) element modulating the resistance of a piezoresistive (PR) element.
Data Source
AI summary
A method of forming a piezoelectronic transistor (PET), the PET, and a semiconductor device including the PET are described. The method includes forming a piezoelectric (PE) element with a trench and forming a pair of electrodes on the PE element in a coplanar arrangement in a first plane, both of the pair of electrodes being on a same side of the PE element. The method also includes forming a piezoresistive (PR) element above the pair of electrodes and forming a clamp above the PR element. Applying a voltage to the pair of electrodes causes displacement of the PE element perpendicular to the first plane.