Semiconductor Active Pillar Notch for Leakage Reduction
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Solution Overview
Problem
The increasing proximity of active pillars in semiconductor structures leads to electric leakage due to short electron transmission paths, reducing the performance of semiconductor structures like DRAM.
Innovation Solution
Incorporating notches in at least one active pillar, which increases the distance between the notch's bottom wall and adjacent pillars, thereby lengthening the electron migration path and reducing leakage risk.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the distance between adjacent active pillars is reduced to increase integration, then the integration density is improved, but electric leakage occurs between adjacent active pillars
Solution Approach 1:
The active pillar is segmented by introducing a notch structure that divides the pillar body into distinct regions. This segmentation creates an extended electron migration path by forcing electrons to travel from the first doped region through the notch to the second doped region, rather than taking a direct path. The notch acts as a physical divider that increases the effective distance electrons must traverse, thereby reducing leakage while maintaining the close spacing needed for high integration density.
Solution Approach 2:
The notch structure introduces a dimensional change to the active pillar by creating a recess or cavity within the pillar body. This additional dimensional feature (the notch depth and shape) extends the electron migration path in the vertical or lateral dimension, effectively increasing the leakage prevention distance without increasing the horizontal spacing between pillars. This dimensional addition allows leakage reduction while maintaining tight pillar spacing for high integration.
2Object-generated harmful factors
If notches are added to active pillars to reduce leakage, then electric leakage is reduced, but the device structure becomes more complex
Solution Approach 1:
The notch structure applies local quality modification by introducing the complex feature only where needed - specifically in the active pillar regions where leakage prevention is critical. The notch is strategically positioned to face row or column centerlines, creating localized electron path extensions at key leakage points rather than uniformly complicating the entire device structure. This localized approach reduces leakage effectively while minimizing overall structural complexity.
Data Source
AI summary
A semiconductor structure includes a base in which a first doped region is provided and an active pillar group arranged in the first doped region. The active pillar group includes four active pillars arranged in an array. At least one of the active pillars is provided with a notch, which faces at least one of a row centerline or a column centerline of the active pillar group.