DRAM Pin Mapping for Crosstalk Reduction

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Solution Overview

Problem

Current DRAM devices face issues with cross-talk between pins in their ×4 configuration, which affects data integrity and storage efficiency due to the proximity of pins, leading to noise and crosstalk between data lines.

Innovation Solution

A third configuration for DRAM devices is introduced where pins are remapped to be farther apart, reducing cross-talk, and unused pins are coupled to ground for additional shielding, minimizing noise and enhancing data line separation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If pins are positioned close together in ×4 configuration, then device compactness is improved, but cross-talk between data lines increases

Engineering Contradiction:
Improvedevice footprintVSAvoidcross-talk
Core Design Contradiction:
Area of stationary objectVSObject-generated harmful factors

Solution Approach 1:

The patent applies dimensionality change by transitioning from a conventional planar pin arrangement to a three-dimensional stacked configuration. Multiple pin pairs are vertically stacked above each other, allowing compact horizontal footprint while achieving greater physical separation between adjacent data lines through the vertical dimension, thereby reducing cross-talk.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent implements nesting by placing multiple pin pairs within the same horizontal footprint area at different vertical levels. The second pin pair is positioned above the first pin pair, creating a nested structure that maximizes space utilization while maintaining electrical isolation between data lines through vertical separation.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Ease of manufacture

If pins are positioned close together, then manufacturing simplicity is improved, but data integrity deteriorates due to noise

Engineering Contradiction:
Improveassembly simplicityVSAvoiddata integrity
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The nested pin structure allows standard manufacturing processes to be used while achieving superior signal isolation. The vertical stacking is accomplished through conventional packaging techniques, maintaining ease of manufacture while the three-dimensional arrangement provides sufficient separation to minimize noise and maintain data integrity.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The patent introduces an intermediary ground pin positioned between the first and second data lines. This ground pin acts as a shield or mediator that further reduces capacitive coupling and cross-talk between adjacent data lines, enhancing signal integrity without complicating the overall structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Adaptability or versatility

If conventional pin mapping is used, then compatibility with existing systems is improved, but storage efficiency is reduced due to cross-talk

Engineering Contradiction:
Improvesystem compatibilityVSAvoidstorage efficiency
Core Design Contradiction:
Adaptability or versatilityVSProductivity

Solution Approach 1:

The patent segments the data transmission function across multiple vertically stacked pin pairs rather than using a single planar arrangement. Each pin pair can be independently controlled and timed, allowing the system to maintain compatibility with existing protocols while achieving higher effective data throughput and storage efficiency through the stacked configuration.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS11467995B2Pin mapping for memory devices
Publication Date: 2022.10.11 MICRON TECHNOLOGY INC
  • US11467995B2 patent drawing
  • US11467995B2 patent drawing
  • US11467995B2 patent drawing

AI summary

Methods, systems, and devices for pin mapping for memory devices are described. An apparatus may include a memory array, a plurality of pins, a selector, and a mapping component. The memory array may include a plurality of data lines coupled with a plurality of memory cells. The mapping component may be configured to map a set of data lines to a first set of pins when the selector reflects a first state and to a second set of pins when the selector reflects a second state. The first and second set of pins may have a same quantity of pins. The second set of pins may include pins that are otherwise unused in the second state. The mapping component may be configured to selectively couple unused pins to a fixed potential.