Fully Depleted Pixel Amplifier Layout for RTS Noise Suppression
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Solution Overview
Problem
Miniaturization of CMOS sensors leads to the generation of RTS noise due to amplifying transistors, degrading display characteristics, and hindering further size reduction and integration in solid-state imaging devices.
Innovation Solution
A solid-state imaging device with fully-depleted amplifying transistors of the type that do not contain impurities in the channel portion, featuring a gate electrode extending perpendicular to convex strips formed on the semiconductor layer, and a manufacturing method that includes forming convex strips, a photoelectric conversion unit, a floating diffusion, and a transfer gate connected to the floating diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If amplifying transistors are miniaturized to reduce device size and increase integration, then device size is reduced and integration is increased, but RTS noise is generated that degrades display characteristics
Solution Approach 1:
The patent changes the physical parameters of the amplifying transistor by transitioning from a conventional partially-depleted type to a fully-depleted type. This parameter change in the transistor's depletion state eliminates RTS noise while allowing continued miniaturization, as the fully-depleted structure prevents the noise generation mechanism associated with smaller transistor dimensions
2Productivity
If amplifying transistors are miniaturized to increase degree of integration, then degree of integration is increased, but RTS noise is generated that degrades display characteristics
Solution Approach 1:
The patent applies parameter changes by modifying the depletion characteristic of the amplifying transistor to a fully-depleted state. This enables higher degree of integration through miniaturization while the changed parameter (full depletion) prevents RTS noise generation, thus resolving the contradiction between integration density and noise performance
3Length of moving object
If conventional amplifying transistors are used in miniaturized structures, then device size is reduced, but display characteristics are degraded due to RTS noise
Solution Approach 1:
The patent changes the operational parameter of the amplifying transistor from partially-depleted to fully-depleted state. This parameter change allows the transistor to be miniaturized while maintaining reliable display characteristics, as the fully-depleted configuration eliminates the RTS noise that would otherwise degrade display quality in small transistors
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution prevents RTS noise, enabling further miniaturization and increased integration in solid-state imaging devices, and reduces the size of electronic apparatuses that utilize these devices.
Implementation Method 1
charges converted by the photoelectric conversion units of the respective pixels
Data Source
AI summary
The present technique relates to a solid-state imaging device, a solid-state imaging device manufacturing method, and an electronic apparatus that are capable of providing a solid-state imaging device that can prevent generation of RTS noise due to miniaturization of amplifying transistors, and can achieve a smaller size and a higher degree of integration accordingly. A solid-state imaging device includes a photodiode as a photoelectric conversion unit, a transfer gate that reads out charges from the photodiode, a floating diffusion from which the charges of the photodiode are read by an operation of the transfer gate, and an amplifying transistor connected to the floating diffusion. More particularly, the amplifying transistor is of a fully-depleted type. Such an amplifying transistor includes an amplifier gate (gate electrode) extending in a direction perpendicular to convex strips formed by processing a surface layer of a semiconductor layer, for example.