Pixel Structure Capacitor Stacking for Aperture Ratio
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Solution Overview
Problem
The existing pixel structures in liquid crystal displays face a trade-off between increasing storage capacitance and maintaining a high aperture ratio, as the expansion of the capacitor electrode to enhance capacitance often leads to increased power consumption and loading due to overlap with data lines.
Innovation Solution
A pixel structure is designed with a capacitor formed by three electrodes (first, second, and third electrodes) where the first electrode is located below the first insulation layer, allowing for increased storage capacitance without affecting the aperture ratio, and the electrodes are positioned such that they do not overlap with the data line, thus avoiding increased loading.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the capacitor electrode area is expanded to increase storage capacitance, then the capacitance of the storage capacitor is improved, but the aperture ratio of the pixel structure deteriorates
Solution Approach 1:
The patent transitions from a planar capacitor electrode layout to a three-dimensional stacked configuration. The first electrode is positioned in the first conductive layer, the second electrode in the second conductive layer above the first insulation layer, and the third electrode in the third conductive layer above the second insulation layer. This vertical stacking in multiple dimensions increases storage capacitance without occupying additional planar area, thereby maintaining the aperture ratio.
2Area of stationary object
If the capacitor electrode is disposed below the data line to increase aperture ratio, then the aperture ratio of the pixel structure is improved, but the loading of the pixel structure deteriorates
Solution Approach 1:
The capacitor is segmented into three separate electrodes positioned in different conductive layers rather than using a single large electrode. The first electrode is in the first conductive layer, the second electrode is in the second conductive layer above the first insulation layer, and the third electrode is in the third conductive layer above the second insulation layer. This segmentation allows the capacitor to achieve high capacitance through vertical stacking without requiring horizontal overlap with data lines, thus maintaining low loading and reduced power consumption while preserving aperture ratio.
Data Source
AI summary
A manufacturing method of pixel structure includes forming a first conductive layer on a substrate and forming a first insulation layer thereon; forming a second conductive layer on the first insulation layer; forming a second insulation layer on the second conductive layer; forming a semiconductor layer on the second insulation layer above the gate; forming a third conductive layer on the second insulation layer, wherein the gate, the semiconductor layer, the source, and the drain together constitute a thin film transistor, and the first electrode, the second electrode, and the third electrode together constitute a capacitor; forming a third insulation layer on the third conductive layer; and forming a pixel electrode on the third insulation layer, the pixel electrode being electrically connected to the drain.